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IRG7PH50K10DPBF
IRG7PH50K10DPBF
Specifications
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
90 A
Pd - Power Dissipation : :
400 W
Collector- Emitter Voltage VCEO Max : :
1200 V
Package / Case : :
TO-247AC-3
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 30 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
2.4 V
Manufacturer : :
IR / Infineon
Description :
IGBT Transistors 1200V UltraFast Discrete IGBT
Description
The IRG7PH50K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product tags

XA6SLX25T-2CSG324I

,

EPF6024ABI256-2N

,

TS3V713ELRTGR
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IRG7PH50K10DPBF

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Product Detail
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
90 A
Pd - Power Dissipation : :
400 W
Collector- Emitter Voltage VCEO Max : :
1200 V
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IRG7PH50K10DPBF

UDEL Chips Tech Co., Ltd.

Verified Supplier
2 Years
shenzhen
Since 2013
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller
Main Products :
Analog Chip, TVS Diodes ESD Suppressors, Clock And Timer Chips
Total Annual :
1.000.000.00-30.000.000.00
Employee Number :
15~25
Certification Level :
Verified Supplier
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