Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
40 A
Pd - Power Dissipation : :
125 W
Collector- Emitter Voltage VCEO Max : :
600 V
Package / Case : :
TO-247-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
20 V
Collector-Emitter Saturation Voltage : :
1.9 V
Manufacturer : :
Infineon Technologies
Description :
IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC