Gate-Emitter Leakage Current : :
300 uA
Product Category : :
IGBT Transistors
Mounting Style : :
SMD/SMT
Continuous Collector Current at 25 C : :
20 A
Pd - Power Dissipation : :
125 W
Collector- Emitter Voltage VCEO Max : :
440 V
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
15 V
Collector-Emitter Saturation Voltage : :
1.5 V
Manufacturer : :
Littelfuse
Description :
IGBT Transistors NGD8201ANT4G GEN4 IGBT