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High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
Specifications
Delivery Time :
1-3 days
Model Number :
YP801241T
Freq(GHz) :
DC-8.5GHz
Supply Ability :
100000pcs/month
Payment Terms :
T/T
Package :
plastic DFN-6L 4mm*4.5mm
Place of Origin :
Jiangsu, China
Pout :
12W
Price :
5.9USD each
Packaging Details :
Carton
Voltage :
28V
Brand Name :
INNOTION
Product Name :
Power Amplifier
MOQ :
10pcs
Character :
High Power
Description
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.

Product Specifications
Signal Bandwidth DC-8.5GHz
Output Power 12W
Voltage 28V
Package DFN-6L 4mm*4.5mm package
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
Company Information

Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including:

  • WiFi amplifiers
  • VCOs
  • Sweep signal sources
  • Wireless card groups
  • Other product lines

Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.

Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.

Our Services

We stand by our commitment to ensure first-class customer service and support for all our products.

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High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

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Product Detail
Delivery Time :
1-3 days
Model Number :
YP801241T
Freq(GHz) :
DC-8.5GHz
Supply Ability :
100000pcs/month
Payment Terms :
T/T
Package :
plastic DFN-6L 4mm*4.5mm
Contact Supplier
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High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Verified Supplier
2 Years
jiangsu, suzhou
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Seller
Main Products :
Signal Jammer Module, Signal Jammer PCB, Signal Power Amplifier
Total Annual :
300000-500000
Employee Number :
120~150
Certification Level :
Verified Supplier
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