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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Specifications
Brand Name :
SZHUASHI
Model Number :
YP601820T
Place of Origin :
Jiangsu，China
MOQ :
2 PCS
Price :
20USD each
Payment Terms :
T/T
Supply Ability :
10000pcs/ month
Delivery Time :
2-7days
Packaging Details :
Carton
Product Name :
RF Power Transistor
Pout :
20W
Frequency :
6000MHz
Feature :
High Efficiency
Description

Innotion High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor


Product Description

Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package.

Pout 20W
Frequency 6000MHz
Features
  • High Efficiency and Linear Gain Operation
  • Negative Gate Voltage and Bias Sequencing Required
  • Excellent Thermal Stability and Excellent Ruggedness
  • Metal Based Package Sealed with Ceramic-Epoxy Lid
  • Gold Metallization System: Chip-Wire Bond-Package



Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier ICInnotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Company Information

Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines;
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.

Our Services

We stand by our commitment to ensure first class customer service.


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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

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Product Detail
Brand Name :
SZHUASHI
Model Number :
YP601820T
Place of Origin :
Jiangsu，China
MOQ :
2 PCS
Price :
20USD each
Payment Terms :
T/T
Contact Supplier
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Verified Supplier
2 Years
jiangsu, suzhou
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Seller
Main Products :
Signal Jammer Module, Signal Jammer PCB, Signal Power Amplifier
Total Annual :
300000-500000
Employee Number :
120~150
Certification Level :
Verified Supplier
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