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High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
Specifications
Voltage - DC Reverse(Vr) :
55V
Spectral Range :
900nm~1700nm
Dark Current :
15nA
Operating Temperature :
-40℃~+85℃
Description :
55V 900nm~1700nm 15nA TO-56-3 Photodiodes RoHS
Mfr. Part # :
KPDEA007-56F-B
Model Number :
KPDEA007-56F-B
Package :
TO-56-3
Description

Product Overview

The KPDEA007-56F is an InGaAs Avalanche Photodiode from KYOSEMI, designed for high-speed applications up to 1.25Gbps. It features a 5.6mm CAN package with a flat window cap, offering high sensitivity and low dark current. This photodiode is suitable for applications such as SONET and GE-PON.

Product Attributes

  • Brand: KYOSEMI
  • Product Line: KP-A InGaAs Avalanche Photodiodes
  • Package Type: TO-CAN
  • Window Cap: Flat window cap
  • Compliance: RoHS Directive (2011/65/EU)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Current IR - - 2 mA -
Forward current IF - - 10 mA -
Operating temperature Topr -40 - +85 Avoid dew condensation
Storage temperature Tstg -40 - +85 Avoid dew condensation
Active area D - 0.075 - mm -
Bandwidth BW - 2.0 - GHz M=10
Responsivity R 0.80 0.90 1.05 A/W =1310nm, M=1
=1550nm, M=1
Dark current ID - 15 65 nA VR=VB x 0.9
Breakdown voltage VB 35 45 55 V ID=10A
Temperature coefficient of VB VB/T 0.08 0.1 0.12 V/ -
Chip capacitance Cchip - 0.54 0.65 pF f=1MHz
Total capacitance Ct - 0.9 1.1 pF f=1MHz

2411192332_California-Eastern-Laboratories-KPDEA007-56F-B_C3211079.pdf

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High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package

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Product Detail
Voltage - DC Reverse(Vr) :
55V
Spectral Range :
900nm~1700nm
Dark Current :
15nA
Operating Temperature :
-40℃~+85℃
Description :
55V 900nm~1700nm 15nA TO-56-3 Photodiodes RoHS
Mfr. Part # :
KPDEA007-56F-B
Contact Supplier
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package
High speed optical photodiode California Eastern Laboratories KPDEA007-56F-B InGaAs Avalanche type with 5.6mm CAN package

Changsha Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
hunan, changsha
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Analog and Digital Output, Pressure Sensors, Transducers, Sensor, Transducer Amplifiers
Employee Number :
300~500
Certification Level :
Verified Supplier
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