This photodiode, housed in a TO-18 package, offers a 1 mm active area. It is characterized by low cost, low dark current, and low capacitance. The device is suitable for applications requiring sensitive light detection within its spectral response range.
| Parameters | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Active Area | 1.35 mm x 0.76 mm | 1 mm | |||
| Responsivity @ 632 nm | 0.36 | 0.40 | A/W | ||
| Dark Current, Idr | VR = 10 V | 0.2 | 1 | nA | |
| Reverse Breakdown Voltage, VR | IR = 10 A | 25 | 60 | Volts | |
| Capacitance, C | VR = 10 V | 0.2 | 2 | pF | |
| Rise Time | VR = 10 V | 8 | 15 | nsec | |
| Series Resistance | Vf = 1 V | 25 | 60 | Ohms |
| Parameters | Units |
|---|---|
| Storage and Operating Temperature Range | -55C to 100C |
| Maximum Junction Temperature | 100C |
| Lead Soldering Temperature | 260C |
1/16" from case for 10 seconds.