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California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
Specifications
Voltage - DC Reverse(Vr) :
55V
Spectral Range :
900nm~1700nm
Dark Current :
10nA
Operating Temperature :
-40℃~+85℃
Description :
55V 900nm~1700nm 10nA TO-56-3 Photodiodes RoHS
Mfr. Part # :
KPDEA005-56F-B
Model Number :
KPDEA005-56F-B
Package :
TO-56-3
Description

Product Overview

The KPDEA005-56F is an InGaAs Avalanche Photodiode from KYOTO SEMICONDUCTOR, designed for high-speed applications up to 2.5Gbps. It features low dark current and high sensitivity, making it suitable for SONET and G-PON/GE-PON systems. The photodiode is housed in a 5.6mm TO-CAN package with a flat window cap.

Product Attributes

  • Brand: KYOTO SEMICONDUCTOR
  • Product Line: KP-A InGaAs Avalanche Photodiodes
  • Package Type: TO-CAN (5.6mm)
  • Window Type: Flat window cap
  • Compliance: RoHS Directive (2011/65/EU)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings
Reverse Current IR - - 2 mA -
Forward current IF - - 10 mA -
Operating temperature Topr -40 - +85 Avoid dew condensation
Storage temperature Tstg -40 - +85 Avoid dew condensation
Electrical and Optical Characteristics (Ta=25 unless otherwise noted)
Active area D - 0.055 - mm -
Bandwidth BW - - 3.0 GHz M=10
Responsivity R 0.85 0.95 0.95 A/W =1310nm, M=1
- - 1.05 =1550nm, M=1
Dark current ID - 10 50 nA VR=VB x 0.9
Breakdown voltage VB 35 45 55 V ID=10A
Temperature coefficient of VB VB/T 0.08 0.1 0.12 V/ -
Chip capacitance Cchip - 0.38 0.5 pF f=1MHz
Total capacitance Ct - 0.68 0.8 pF f=1MHz

2411192332_California-Eastern-Laboratories-KPDEA005-56F-B_C3211035.pdf

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California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications

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Product Detail
Voltage - DC Reverse(Vr) :
55V
Spectral Range :
900nm~1700nm
Dark Current :
10nA
Operating Temperature :
-40℃~+85℃
Description :
55V 900nm~1700nm 10nA TO-56-3 Photodiodes RoHS
Mfr. Part # :
KPDEA005-56F-B
Contact Supplier
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications
California Eastern Laboratories KPDEA005-56F-B InGaAs Avalanche Photodiode Suitable for SONET and GPON Applications

Changsha Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
hunan, changsha
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Analog and Digital Output, Pressure Sensors, Transducers, Sensor, Transducer Amplifiers
Employee Number :
300~500
Certification Level :
Verified Supplier
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