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Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage
Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage
Specifications
Non-Repetitive Peak Forward Surge Current :
2A
Reverse Leakage Current (Ir) :
500nA@80V
Reverse Recovery Time (trr) :
1.6ns
Operating Junction Temperature Range :
-
Voltage - DC Reverse (Vr) (Max) :
80V
Diode Configuration :
-
Pd - Power Dissipation :
150mW
Voltage - Forward(Vf@If) :
1.2V@100mA
Current - Rectified :
100mA
Description :
Diode 80V 100mA ESC
Mfr. Part # :
KDS160E-RTL/P
Model Number :
KDS160E-RTL/P
Package :
ESC
Description

Product Overview

The KDS160E is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small ESC package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix 'U' indicates qualification to AEC-Q101 standards, making it suitable for demanding automotive applications.

Product Attributes

  • Type: Silicon Epitaxial Planar Diode
  • Application: Ultra High Speed Switching
  • AEC-Q101 Qualified (Suffix U)

Technical Specifications

Model Marking Maximum (Peak) Reverse Voltage (VRM) Reverse Voltage (VR) Maximum (Peak) Forward Current (IFM) Average Forward Current (IO) Surge Current (IFSM) (10ms) Power Dissipation (PD)* Junction Temperature (Tj) Storage Temperature Range (Tstg)
KDS160E F U 85 V 80 V 300 mA 100 mA 2 A 150 mW 150 -55150
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward Voltage VF(1) IF=1mA - 0.60 - V
Forward Voltage VF(2) IF=10mA - 0.72 - V
Forward Voltage VF(3) IF=100mA - 0.90 1.20 V
Reverse Current IR VR=80V - - 0.5 A
Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS

* Mounted on a glass epoxy circuit board of 2020mm, pad dimension of 44mm.

Dimension Symbol Millimeters
A A 1.60 0.10
B B 1.20 0.10
C C 0.80 0.10
D D 0.30 0.05
E E 0.60 0.10
F F 0.13 0.05
G G 0.20 0.10

2410121747_KEC-KDS160E-RTL-P_C919692.pdf

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Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage

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Product Detail
Non-Repetitive Peak Forward Surge Current :
2A
Reverse Leakage Current (Ir) :
500nA@80V
Reverse Recovery Time (trr) :
1.6ns
Operating Junction Temperature Range :
-
Voltage - DC Reverse (Vr) (Max) :
80V
Diode Configuration :
-
Contact Supplier
Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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