Specifications
Reverse Leakage Current (Ir) :
15uA
Voltage - DC Reverse (Vr) (Max) :
1.2kV
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
1.45V
Current - Rectified :
30A
Description :
SiC Diode Independent 1.2kV 30A Through Hole TO-247-2
Mfr. Part # :
KN3D30120H
Model Number :
KN3D30120H
Package :
TO-247-2
Description

Product Overview

The KN3D30120H is a Silicon Carbide Schottky Diode designed for high-performance applications. It features zero forward/reverse recovery current, high blocking voltage, high frequency operation, and a positive temperature coefficient on Forward Voltage (VF). This diode offers temperature-independent switching behavior and high surge current capability, leading to higher system efficiency, parallel device convenience without thermal runaway, and suitability for higher temperature applications. It finds use in motor drives, solar/wind inverters, AC/DC converters, DC/DC converters, and uninterruptable power supplies.

Product Attributes

  • Brand: KNSCHA
  • Material: Silicon Carbide

Technical Specifications

ParameterSymbolTest conditionsValueUnit
Peak Repetitive Reverse VoltageVRRM1200V
Continuous Forward CurrentIFTC=25C80A
TC=135C40
TC=140C30
Non repetitive Forward Surge CurrentIFSMTC = 25C, tp=10 ms, Half Sine Pulse230A
TC = 110C, tp=10 ms, Half Sine Pulse220
Repetitive peak Forward Surge CurrentIFRMTC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse200A
TC = 110C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse190
Total power dissipationPDTC=25C330W
TC=110C140
Single Pulse Avalanche EnergyEASL=2mH, IAS=15A225mJ
Diode dv/dt ruggednessdv/dtVR = 0-1200V80V/ns
Operating Junction TemperatureTJ-55 to 175C
Storage TemperatureTSTG-55 to 175C
DC Blocking VoltageVDCTJ = 25C1200V
Forward VoltageVFIF = 30A, TJ =25C1.45 - 1.8V
IF = 30A, TJ = 125C1.75
IF = 30A, TJ =175C1.95
Reverse CurrentIRVR = 1200V, TJ = 25C15 - 200uA
VR = 1200V, TJ = 125C60 - 300
VR = 1200V, TJ = 175C100 - 500
Total Capacitive ChargeQCVR = 800V, TJ = 25C155nC
Total CapacitanceCVR = 1V, TJ = 25C, Freq = 1MHz1810pF
VR = 400V, TJ = 25C, Freq = 1MHz145
VR = 800V, TJ = 25C, Freq = 1MHz103
Thermal ResistanceRth(j-c)junction-case0.45 - 0.60C/W

2410122008_KNSCHA-KN3D30120H_C5373186.pdf

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Silicon Carbide Schottky Diode KNSCHA KN3D30120H Suitable for Solar Wind Inverters and Motor Drives

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Reverse Leakage Current (Ir) :
15uA
Voltage - DC Reverse (Vr) (Max) :
1.2kV
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
1.45V
Current - Rectified :
30A
Description :
SiC Diode Independent 1.2kV 30A Through Hole TO-247-2
Contact Supplier
Silicon Carbide Schottky Diode KNSCHA KN3D30120H Suitable for Solar Wind Inverters and Motor Drives

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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