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Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching
Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching
Specifications
Reverse Leakage Current (Ir) :
5uA
Voltage - DC Reverse (Vr) (Max) :
1.2kV
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
1.45V
Current - Rectified :
10A
Description :
SiC Diode Independent 1.2kV 10A Through Hole TO-220-2
Mfr. Part # :
KN3D10120A
Model Number :
KN3D10120A
Package :
TO-220-2
Description

Product Overview

The KN3D10120A is a Silicon Carbide Schottky Diode featuring a 1.2kV rating, zero reverse recovery current, and temperature-independent switching for high-frequency operation. Its unipolar nature eliminates switching losses, enabling high efficiency and reducing the need for large heatsinks. This diode is suitable for parallel operation without thermal runaway and is ideal for applications such as switching mode power supplies, boost diodes in PFC, DC/DC and AC/DC converters, and free-wheeling diodes in inverters.

Product Attributes

  • Brand: KN3D
  • Material: Silicon Carbide
  • Package: TO-220-2
  • Marking: KNSCHA

Technical Specifications

ParameterValueUnitTest ConditionsNote
Maximum Ratings
Repetitive Peak Reverse Voltage (VRRM)1200V
Surge Peak Reverse Voltage (VRSM)1300V
DC Peak Reverse Voltage (VR)1200V
Continuous Forward Current (IF)36.7ATc=25 Fig. 3
17ATc=135 Fig. 3
10ATc=156 Fig. 3
Non-Repetitive Forward Surge Current (IFSM)96ATc=25 tp=10 msHalf Sine Pulse
Power Dissipation (Ptot)185WTc=25 Fig. 4
80WTc=110 Fig. 4
Operating Junction Temperature Range (TJ)-55 to +175
Storage Temperature Range (Tstg)-55 to +175
Electrical Characteristics
Forward Voltage (VF)1.45VIF = 10 ATJ = 25 Fig. 1
1.75VIF = 10 ATJ = 175 Fig. 1
Reverse Current (IR)5AVR = 1200 VTJ = 25 Fig. 2
100AVR = 1200 VTJ = 175 Fig. 2
Total Capacitive Charge (QC)61nCVR = 800 VIF = 10 A TJ = 25 Fig. 6
Total Capacitance (C)800pFVR = 0 V TJ = 25 f = 1 MHzFig. 5
57pFVR = 400 VTJ = 25 f = 1 MHzFig. 5
42pFVR = 800 VTJ = 25 f = 1 MHzFig. 5
Capacitance Stored Energy (EC)15.6JVR = 800 VFig. 7
Thermal Characteristics
Thermal Resistance from Junction to Case (RJC)0.81/WFig.8

2410121227_KNSCHA-KN3D10120A_C5373180.pdf

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Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching

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Product Detail
Reverse Leakage Current (Ir) :
5uA
Voltage - DC Reverse (Vr) (Max) :
1.2kV
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
1.45V
Current - Rectified :
10A
Description :
SiC Diode Independent 1.2kV 10A Through Hole TO-220-2
Contact Supplier
Silicon Carbide Schottky Diode KNSCHA KN3D10120A with Zero Reverse Recovery Current and Switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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