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Low voltage high frequency diode Minos MBRF10100CT for inverter and freewheeling circuit applications
Low voltage high frequency diode Minos MBRF10100CT for inverter and freewheeling circuit applications
Specifications
Reverse Leakage Current (Ir) :
100uA@100V
Non-Repetitive Peak Forward Surge Current :
30A
Operating Junction Temperature Range :
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward(Vf@If) :
800mV@5A
Current - Rectified :
5A
Description :
Diode 100V 5A Through Hole TO-220F
Mfr. Part # :
MBRF10100CT
Model Number :
MBRF10100CT
Package :
TO-220F
Description

Product Overview

This product is designed for low-voltage, high-frequency inverter circuits, freewheeling circuits, and protection circuits. It features a TO-220F package.

Product Attributes

  • Brand: MNS (Shenzhen Minos)
  • Origin: Shenzhen, China

Technical Specifications

ParameterSymbolDescriptionMinTypicalMaxUnitTest Condition
Storage TemperatureTstg-65150
Junction TemperatureTj-65150
Maximum Repetitive Peak Reverse VoltageVRRM100V
Peak Working Inverse VoltageVRWM100V
RMS Reverse Working VoltageVR(RMS)70V
Maximum DC Reverse VoltageVR100V
Maximum Forward Average CurrentIF(AV)(Tc=100)AWhole device 10A, Single device 5A
Forward Peak Surge CurrentIFSM(Single device, 60HZ)30A
Reverse Transient CurrentIR0.1mAVR=VRRM, TC = 25 C
Reverse Transient CurrentIR50TC = 125 C
Forward Peak Voltage DropVF(Note 1)0.80VIF= 5 A, TC = 25 C
Forward Peak Voltage DropVF(Note 1)0.85VIF= 5 A, TC = 125 C
Forward Peak Voltage DropVF(Note 1)0.95VIF= 10 A, TC= 25 C
Forward Peak Voltage DropVF(Note 1)0.85VIF= 10 A, TC = 125 C
Thermal Resistance Junction to PinRth(j-c)Typical3.0/W
Junction CapacitanceCj(Note 2)300pFf=1MHz, VR=4V
Rate of Voltage SlewdV/dt10000V/s

Notes:
1. Pulse test, pulse width 300S, duty cycle 2%.
2. Test conditions f=1MHz VR=4V.

Pin Configuration:
1 - Anode A1
2 - Cathode K
3 - Anode A2

Package Description (TO-220F):

ItemsValues(mm)MINMAX
A9.6010.4
B15.416.2
B18.909.50
C4.304.90
C12.103.00
D2.403.00
E0.601.00
F0.300.60
G1.121.42
H3.403.80
I1.602.90
L12.014.0
N2.342.74
Q3.153.55
p2.903.30

Important Notes:
1. Exceeding the maximum ratings of the device may cause permanent damage and affect dependability. Please adhere to the absolute maximum ratings during circuit design.
2. When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
3. MOSFETs are sensitive to static electricity; protect them from damage during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777


2409272003_Minos-MBRF10100CT_C5366127.pdf

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Low voltage high frequency diode Minos MBRF10100CT for inverter and freewheeling circuit applications

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Product Detail
Reverse Leakage Current (Ir) :
100uA@100V
Non-Repetitive Peak Forward Surge Current :
30A
Operating Junction Temperature Range :
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward(Vf@If) :
800mV@5A
Current - Rectified :
5A
Contact Supplier
Low voltage high frequency diode Minos MBRF10100CT for inverter and freewheeling circuit applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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