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High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction
High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction
Specifications
Non-Repetitive Peak Forward Surge Current :
135A
Reverse Leakage Current (Ir) :
20uA
Reverse Recovery Time (trr) :
35ns
Voltage - DC Reverse (Vr) (Max) :
600V
Voltage - Forward(Vf@If) :
1.6V@15A
Current - Rectified :
15A
Description :
135A 35ns 600V 1.6V@15A 15A TO-220-2 Single Diodes RoHS
Mfr. Part # :
MUR1560G-MNS
Model Number :
MUR1560G-MNS
Package :
TO-220-2
Description

Product Description

The FRED Ultrafast Soft Recovery Diode, 600V, 15A is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery characteristic provides buffering in most applications, making it suitable for power converters and other applications where switching losses are not a significant portion of the total losses. Key advantages include ultrafast recovery, high-frequency operation, low IR value, and very low forward voltage, with an epitaxial chip construction.

Product Attributes

  • Brand: MNS-KX
  • Origin: Shenzhen Minos (implied from contact information)
  • Certifications: None explicitly mentioned
  • Material: Epitaxial chip construction
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionsValuesUnits
Absolute Maximum Ratings
Repetitive peak reverse voltageVRRM600V
Continuous forward currentIF(AV)TA=11015A
Single pulse forward currentIFSMTA=25135A
Maximum repetitive forward currentIFRMSquare wave, 20kHZ35A
Operating junction temperatureTj175
Storage temperaturesTstg-55 to +175
Electrical Characteristics
Breakdown voltageVBRVRIR=100A600V
Forward voltageVFIF=15 A1.30 - 1.60V
IF=15 A, Tj =1251.20 - 1.50V
Reverse leakage currentIRVR= VRRM20A
Tj=150, VR=600V200A
Reverse recovery timetrrIF=0.5A, IR=1A, IRR=0.25A35ns
IF=1A,VR=30V, di/dt =200A/us25 - 35ns
Thermal Characteristics
Junction-to-CaseRthJC2.8/W
Package Information
PackageTO-220-2

Notes

  • Exceeding the maximum ratings of the device may cause damage, even permanent failure, affecting machine dependability. Do not exceed absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect them from damage.
  • Shenzhen Minos reserves the right to make changes without prior notice.

2506121200_Minos-MUR1560G-MNS_C49108774.pdf

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High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction

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Product Detail
Non-Repetitive Peak Forward Surge Current :
135A
Reverse Leakage Current (Ir) :
20uA
Reverse Recovery Time (trr) :
35ns
Voltage - DC Reverse (Vr) (Max) :
600V
Voltage - Forward(Vf@If) :
1.6V@15A
Current - Rectified :
15A
Contact Supplier
High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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