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Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package
Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package
Specifications
Non-Repetitive Peak Forward Surge Current :
50A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Reverse Leakage Current (Ir) :
30uA@650V
Voltage - Forward(Vf@If) :
1.4V@6A
Current - Rectified :
6A
Description :
50A 1 Independent 650V 1.4V@6A 6A TO-220-2 Single Diodes RoHS
Mfr. Part # :
RSS06065B
Model Number :
RSS06065B
Package :
TO-220-2
Description

RSS06065B Silicon Carbide Schottky Diode

The RSS06065B is a Silicon Carbide Schottky Diode designed for applications requiring high-speed switching and low forward voltage drop. It features a positive temperature coefficient and temperature-independent switching behavior, making it suitable for Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supply systems.

Product Attributes

  • Brand: Reasunos
  • Material: Silicon Carbide
  • Package: TO-220-2

Technical Specifications

Part NumberVRRM (V)IF (A)QC (nC)PackageMarkingPackingQty.
RSS06065B6506 (TC150)23TO-220-2RSS06065BTube50 PCS
SymbolParameterValueUnitTest ConditionsNote
VRRMRepetitive Peak Reverse Voltage650V
VRSMSurge Peak Reverse Voltage650V
VRDC Blocking Voltage650V
IFForward Current6ATC150
IFSMNon-Repetitive Forward Surge Current50ATC = 25, tp = 10ms Half Sine Wave
IF,MaxNon-Repetitive Peak Forward Surge Current520ATC=25C, tP= 10 s, Pulse
IFRMRepetitive Peak Forward Surge Current35ATC = 25, tp = 10ms Half Sine Wave
PtotPower Dissipation70WTC = 25
PtotPower DissipationWTC = 110
TJ,TSTGOperating Junction and Storage Temperature-55 to175
SymbolParameterTyp.Max.UnitTest ConditionsNote
VFForward Voltage1.41.8VIF =6A, TJ = 25
VFForward Voltage1.6VIF =6A, TJ = 175
IRReverse Current2120AVR =650V, TJ = 25
IRReverse Current1530AVR = 650V, TJ = 175
CTotal Capacitance423pFVR=0V, TJ = 25, f=1MHz
CTotal Capacitance44pFVR=200V, TJ = 25, f=1MHz
CTotal Capacitance37pFVR=400V, TJ = 25, f = 1MHz
QCTotal Capacitive Charge23nCVR =400V,TJ = 25Qc= 0 VR C V dV
SymbolParameterTyp.UnitNote
RJCThermal Resistance from Junction to Case2.3/W

2509121150_REASUNOS-RSS06065B_C51904695.pdf

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Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package

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Product Detail
Non-Repetitive Peak Forward Surge Current :
50A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Reverse Leakage Current (Ir) :
30uA@650V
Voltage - Forward(Vf@If) :
1.4V@6A
Contact Supplier
Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Single FETs, MOSFETs, Bridge Rectifiers, Single Bipolar Transistors
Employee Number :
300~500
Certification Level :
Verified Supplier
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