MachineU > China Products
Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design
Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design
Specifications
Non-Repetitive Peak Forward Surge Current :
105A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.3V@10A
Reverse Leakage Current (Ir) :
20uA@650V
Current - Rectified :
8A
Description :
105A 1 Independent 650V 1.3V@10A 8A TO-220F Single Diodes RoHS
Mfr. Part # :
RSS08065F
Model Number :
RSS08065F
Package :
TO-220F
Description

Product Overview

The RSS08065F is a Silicon Carbide Schottky Diode designed for applications such as Power Factor Correction, Server Mode Power Supplies, and Uninterruptible Power Supplies. It features low forward voltage drop, high-speed switching, and a positive temperature coefficient, ensuring temperature-independent switching behavior.

Product Attributes

  • Brand: Reasunos
  • Material: Silicon Carbide
  • Package: TO-220F

Technical Specifications

Part NumberPackageMarkingPackingQty.VRRM (V)IF (A) @ TC=120QC (nC)
RSS08065FTO-220FRSS08065FTube50 PCS650828
SymbolParameterValueUnitTest ConditionsNote
VRRMRepetitive Peak Reverse Voltage650V
VRSMSurge Peak Reverse Voltage650V
VRDC Blocking Voltage650V
IFForward Current8ATC = 120
IFSMNon-Repetitive Forward Surge Current105ATC = 25, tp = 10ms Half Sine Wave
IF,MaxNon-Repetitive Peak Forward Surge Current840ATC=25C, tP= 10 s, Pulse
IFRMRepetitive Peak Forward Surge Current80ATC = 25, tp = 10ms Half Sine Wave
PtotPower Dissipation55.6 / 24.1WTC = 25 / TC = 110
TCMaximum Case Temperature153
TJ,TSTGOperating Junction and Storage Temperature-55 to175
SymbolParameterTyp.Max.UnitTest ConditionsNote
VFForward Voltage1.3 / 1.61.75 / 2.0VIF = 10A, TJ = 25 / IF = 10A, TJ = 175
IRReverse Current1 / 2020 / 200AVR = 650V, TJ = 25 / VR = 650V, TJ = 175
CTotal Capacitance550 / 53 / 48pFVR=0V, TJ = 25, f=1MHz / VR=200V, TJ = 25, f=1MHz / VR=400V, TJ = 25, f = 1MHz
QCTotal Capacitive Charge28nCVR =400V,IF=10A,TJ = 25Qc= 0 VR C V dV Ec
EcCapacitance Stored Energy7.0JVR =400V
SymbolParameterTyp.UnitNote
RJCThermal Resistance from Junction to Case2.7/W

2509121150_REASUNOS-RSS08065F_C51904690.pdf

Send your message to this supplier
Send Now

Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design

Ask Latest Price
Product Detail
Non-Repetitive Peak Forward Surge Current :
105A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.3V@10A
Reverse Leakage Current (Ir) :
20uA@650V
Contact Supplier
Power Factor Correction Diode REASUNOS RSS08065F with Silicon Carbide Material and TO220F Package Design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Diodes
MachineU China Products
Contact Supplier
Submit Requirement