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Silicon Carbide Schottky Diode REASUNOS RSS06065G for Severe Mode Power Supplies and UPS Applications
Silicon Carbide Schottky Diode REASUNOS RSS06065G for Severe Mode Power Supplies and UPS Applications
Specifications
Non-Repetitive Peak Forward Surge Current :
65A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Reverse Leakage Current (Ir) :
10uA@650V
Voltage - Forward(Vf@If) :
1.3V@6A
Current - Rectified :
6A
Description :
65A 1 Independent 650V 1.3V@6A 6A PDFN-8(5x6) Single Diodes RoHS
Mfr. Part # :
RSS06065G
Model Number :
RSS06065G
Package :
PDFN-8(5x6)
Description

Reasunos RSS06065G Silicon Carbide Schottky Diode

The Reasunos RSS06065G is a Silicon Carbide Schottky Diode designed for applications requiring high-speed switching and low forward voltage drop. Its positive temperature coefficient and temperature-independent switching behavior make it suitable for demanding power electronics applications such as Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supplies.

Product Attributes

  • Brand: Reasunos
  • Material: Silicon Carbide
  • Product Code: RSS06065G
  • Revision: F-B01-06-2025

Technical Specifications

Part Number Package Marking Packing Qty. VRRM (V) IF (A) @ TC=150 QC (nC) Repetitive Peak Reverse Voltage (V) Surge Peak Reverse Voltage (V) DC Blocking Voltage (V) Forward Current (A) @ TC=150 Non-Repetitive Forward Surge Current (A) @ TC=25, tp=10ms Non-Repetitive Peak Forward Surge Current (A) @ TC=25, tP=10 s, Pulse Repetitive Peak Forward Surge Current (A) @ TC=25, tp=10ms Power Dissipation (W) @ TC=25 Power Dissipation (W) @ TC=110 Operating Junction and Storage Temperature () Forward Voltage (V) @ IF=6A, TJ=25 Forward Voltage (V) @ IF=6A, TJ=175 Reverse Current (A) @ VR=650V, TJ=25 Reverse Current (A) @ VR=650V, TJ=175 Total Capacitance (pF) @ VR=0V, TJ=25, f=1MHz Total Capacitance (pF) @ VR=200V, TJ=25, f=1MHz Total Capacitance (pF) @ VR=400V, TJ=25, f=1MHz Total Capacitive Charge (nC) @ VR=400V,TJ=25 Capacitance Stored Energy (J) @ VR=400V Thermal Resistance from Junction to Case (/W)
RSS06065G PDFN5*6 RSS06065G 5000 PCS 650 6 17 650 650 650 6 65 520 40 111 48 -55 to175 1.3 (Typ.) / 1.75 (Max.) 1.7 (Typ.) / 2.0 (Max.) 1.17 (Typ.) / 40 (Max.) 10 (Typ.) / 200 (Max.) 332 33 28 17 4.3 1.95 (Typ.)

2509121150_REASUNOS-RSS06065G_C51904689.pdf

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Silicon Carbide Schottky Diode REASUNOS RSS06065G for Severe Mode Power Supplies and UPS Applications

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Product Detail
Non-Repetitive Peak Forward Surge Current :
65A
Operating Junction Temperature Range :
-55℃~+175℃
Diode Configuration :
1 Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Reverse Leakage Current (Ir) :
10uA@650V
Voltage - Forward(Vf@If) :
1.3V@6A
Contact Supplier
Silicon Carbide Schottky Diode REASUNOS RSS06065G for Severe Mode Power Supplies and UPS Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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