Product Overview
The 1N4448D1 is a fast switching diode designed for high-speed applications. It features low reverse leakage current and is ROHS compliant with UL-94 V-0 / Green EMC certification. The device has a matte tin lead finish (Pb-Free).
Product Attributes
- Brand: Anhui Anmei Semiconductor Co., Ltd.
- Origin: China
- Certifications: ROHS Compliant, UL-94 V-0 / Green EMC
- Lead Finish: Matte Tin Lead (Pb-Free)
Technical Specifications
| Symbol | Parameter | Conditions | Value | Units |
| VRSM | Non-Repetitive Peak Reverse Voltage | | 100 | V |
| VRRM | Peak Repetitive Reverse Voltage | | 80 | V |
| VRWM | Working Peak Reverse Voltage | | 80 | V |
| VR | DC Blocking Voltage | | 80 | V |
| IFRM | Repetitive Peak Forward Current | | 300 | mA |
| IO | Average Forward Current | | 100 | mA |
| IFSM | Non-Repetitive Peak Forward Current *1 | Pulse width = 1s | 2 | A |
| PD | Power Dissipation | | 200 | mW |
| TJ | Junction Temperature | | 150 | |
| TSTG | Storage Temperature | | -55 to +150 | |
| VR | Reverse Voltage | IR=100uA | 80 | V |
| VF | Forward Voltage | IF=5mA | 0.62 - 0.72 | V |
| VF | Forward Voltage | IF=10mA | 0.855 | V |
| VF | Forward Voltage | IF=100mA | 1.0 | V |
| VF | Forward Voltage | IF=150mA | 1.25 | V |
| IR | Reverse Leakage Current | VR=80V | 100 | nA |
| IR | Reverse Leakage Current | VR=20V | 2 | nA |
| C | Capacitance | VR = 0.5V, f = 1MHz | 3 | pF |
| TRR | Reverse Recovery Time | IF = IR =10mA, IRR = 1mA, RL = 100 | 4 | ns |
Ordering Information
| Device | Package | Shipping | Tape wide | Emboss pitch | Tape specification | Notes |
| 1N4448D1 | DFN1006-2L | Tape & Reel | | | 10000pcs /7 Reel | 8mm | 4mm |
2409280200_amsem-1N4448D1_C7528882.pdf