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Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts
Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts
Specifications
Non-Repetitive Peak Forward Surge Current :
50A
Reverse Leakage Current (Ir) :
5uA
Reverse Recovery Time (trr) :
35ns
Operating Junction Temperature Range :
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max) :
200V
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
950mV@2A
Current - Rectified :
2A
Description :
50A 35ns 200V Independent 950mV@2A 2A SMB Single Diodes RoHS
Mfr. Part # :
MUR220S
Model Number :
MUR220S
Package :
SMB
Description

Product Overview

The MUR220S is an Ultra-Fast Recovery Rectifier Diode from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, a glass-passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The product meets MSL level 1, per J-STD-020, with a maximum peak of 260 C.

Product Attributes

  • Brand: Anhui Anmei Semiconductor Co.,Ltd.
  • Document Number: 804012
  • Revision: 21-Mar-20
  • Material: Glass passivated chip junction
  • Packaging: DO-214AA (SMB)
  • Certifications: UL 94 V-0 flammability rating, RoHS-compliant, Meets MSL level 1, per J-STD-020

Technical Specifications

ParameterSymbolUnitConditionsMUR220S
Repetitive Peak Reverse VoltageVRRMV200
Average Forward CurrentI F(AV)ATa=252.0
Surge(Non-repetitive)Forward CurrentIFSMATa=25, 60Hz Half-sine wave, 1 cycle60
Storage TemperatureTstg-55 ~ +150
Junction TemperatureTj-55 ~ +150
Peak Forward VoltageVFMVIF=2.0A0.95
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta=255.0
Peak Reverse CurrentIRRM2ATa=125300
Reverse Recovery timeTrrnsIF =0.5A, IR =1A, RR =0.25A35
Thermal Resistance(Typical)RJ-L/WBetween junction and ambient20
Typical junction capacitanceCjpFMeasured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C25
Non repetitive reverse avalanche energyERmJI(BR)R = 0.7 A, inductive load10

2410122015_amsem-MUR220S_C18336928.pdf

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Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts

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Product Detail
Non-Repetitive Peak Forward Surge Current :
50A
Reverse Leakage Current (Ir) :
5uA
Reverse Recovery Time (trr) :
35ns
Operating Junction Temperature Range :
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max) :
200V
Diode Configuration :
Independent
Contact Supplier
Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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