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Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Specifications
Non-Repetitive Peak Forward Surge Current :
76A
Reverse Leakage Current (Ir) :
2uA@650V
Operating Junction Temperature Range :
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.45V@8A
Current - Rectified :
8A
Description :
SiC Diode 650V 8A Through Hole TO-220-2
Mfr. Part # :
BCH65S08D3
Model Number :
BCH65S08D3
Package :
TO-220-2
Description

Product Overview

The BCH65S08D3 is a 650V, 8A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications requiring high power efficiency, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient. It is suitable for high-frequency operations with low heat dissipation requirements, contributing to reduced system size and cost. Key applications include switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Silicon Carbide Schottky Diode
  • Compliance: RoHS compliant

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
General Parameters
VRRM Repetitive Peak Reverse Voltage 650 V
IF Forward Current TC = 25 25 A
TC = 135 11 A
TC = 154 8 A
IF,SM Non-Repetitive Forward Surge Current TC = 25, tp = 10 ms 76 A
TC = 110, tp = 10 ms 68 A
IF,RM Repetitive Peak Forward Surge Current TC = 25, tp = 10 ms 67 A
I2dt value I2t TC = 25, tp = 10 ms 32 As
TC = 110, tp = 10 ms 28 As
Ptot Power Dissipation TC = 25 100 W
TC = 110 43 W
TC = 150 16 W
TJ,TSTG Operating Junction and Storage Temperature -55 175
Thermal Characteristics
RJC Thermal Resistance, Junction to Case Typ. 1.495 /W
Electrical Characteristics
VDC DC blocking voltage 650 - - V
VF Forward Voltage IF=8ATJ=25 - 1.45 1.7 V
IF=8ATJ=175 - 1.75 - V
IR Reverse Current VR = 650 V, TJ= 25 - 2 20 A
VR = 650 V, TJ= 175 - 40 - A
QC Total Capacitive Charge VR = 400 V, TJ = 25 - 22 - nC
C Total Capacitance VR = 0 V, f = 1MHz - 440 - pF
VR = 200 V, f = 1MHz - 44 - pF
VR = 400 V, f = 1MHz - 38 - pF
EC Capacitance Stored Energy VR = 400 V, TC = 25 - 5.8 - J
Ordering Information
Part Number Top Marking Package Packing Method Quantity
BCH65S08D3 BCH65S08D3 TO220-2 Tube 50 units

2504101957_Bestirpower-BCH65S08D3_C46472734.pdf

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Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions

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Product Detail
Non-Repetitive Peak Forward Surge Current :
76A
Reverse Leakage Current (Ir) :
2uA@650V
Operating Junction Temperature Range :
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.45V@8A
Current - Rectified :
8A
Contact Supplier
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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