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Low Forward Voltage Drop Schottky Diode JKSEMI SD103WT in SOD523 Package for Electronic Applications
Low Forward Voltage Drop Schottky Diode JKSEMI SD103WT in SOD523 Package for Electronic Applications
Specifications
Non-Repetitive Peak Forward Surge Current :
2A
Reverse Leakage Current (Ir) :
1uA@10V
Voltage - DC Reverse (Vr) (Max) :
40V
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
600mV@200mA
Current - Rectified :
350mA
Description :
Diode Independent 40V 350mA Surface Mount SOD-523
Mfr. Part # :
SD103WT
Model Number :
SD103WT
Package :
SOD-523
Description

Product Overview

The SD103WT is a Schottky barrier diode encapsulated in a SOD-523 plastic package. It features a low forward voltage drop, guard ring construction for transient protection, low reverse recovery time, and low reverse capacitance. This diode is suitable for applications requiring efficient rectification and fast switching characteristics.

Product Attributes

  • Package Type: SOD-523
  • Diode Type: Schottky Barrier Diode
  • Marking: S4

Technical Specifications

Symbol Parameter Test Conditions Value Unit
VRRM Peak Repetitive Reverse Voltage 40 V
VRWM Working Peak Reverse Voltage 40 V
VR DC Blocking Voltage 40 V
VR(RMS) RMS Reverse Voltage 28 V
IFM Forward Continuous Current 350 mA
IFSM Non-Repetitive Peak Forward Surge Current @t=8.3ms 2 A
PD Power Dissipation Ta=25 150 mW
RJA Thermal Resistance From Junction To Ambient 667 /W
Tj Junction Temperature 125
Tstg Storage Temperature -55~+150
V(BR) Reverse voltage IR=100A 40 V
IR Reverse current VR=30V 5 A
IR Reverse current VR=20V 2 A
IR Reverse current VR=10V 1 A
VF Forward voltage IF=1mA 0.27 V
VF Forward voltage IF=5mA 0.32 V
VF Forward voltage IF=20mA 0.37 V
VF Forward voltage IF=200mA 0.6 V
Ctot Total capacitance VR=0V,f=1MHz 50 pF
trr Reverse recovery time IF= IR=200mA, Irr=0.1IR, RL=100 10 ns

Package Outline Dimensions (SOD-523)

Symbol Dimension (mm) Dimension (inch)
A 0.510 - 0.770 0.020 - 0.031
A1 0.500 - 0.700 0.020 - 0.028
b 0.250 - 0.350 0.010 - 0.014
c 0.080 - 0.150 0.003 - 0.006
D 0.750 - 0.850 0.030 - 0.033
E 1.100 - 1.300 0.043 - 0.051
E1 1.500 - 1.700 0.059 - 0.067
E2 0.010 - 0.070 0.001 - 0.003
L 7 REF 7 REF
REF 0.200 REF 0.008 REF

Suggested Pad Layout

(Image reference, no data provided)


2410121810_JKSEMI-SD103WT_C2972771.pdf

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Low Forward Voltage Drop Schottky Diode JKSEMI SD103WT in SOD523 Package for Electronic Applications

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Product Detail
Non-Repetitive Peak Forward Surge Current :
2A
Reverse Leakage Current (Ir) :
1uA@10V
Voltage - DC Reverse (Vr) (Max) :
40V
Diode Configuration :
Independent
Voltage - Forward(Vf@If) :
600mV@200mA
Current - Rectified :
350mA
Contact Supplier
Low Forward Voltage Drop Schottky Diode JKSEMI SD103WT in SOD523 Package for Electronic Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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