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High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design
High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design
Specifications
Reverse Leakage Current (Ir) :
1uA@75V
Reverse Recovery Time (trr) :
4ns
Voltage - DC Reverse (Vr) (Max) :
85V
Diode Configuration :
1 Pair Common Anode
Operating Junction Temperature Range :
-
Pd - Power Dissipation :
350mW
Voltage - Forward(Vf@If) :
1.25V@150mA
Current - Rectified :
215mA
Description :
Diode Array 1 Pair Common Anode 85V 215mA Surface Mount SOT-23
Mfr. Part # :
BAW56
Model Number :
BAW56
Package :
SOT-23
Description

Product Overview

The BAW56 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for high-performance electronic circuits.

Product Attributes

  • Brand: BAW56
  • Origin: Shenzhen Yingruixin Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package Type: SOT-23 Plastic Package

Technical Specifications

ParameterSymbolValueUnitNotes
Peak Repetitive Reverse VoltageVRRM85V
Continuous Reverse VoltageVR75V
Forward Current (DC) - Single Diode LoadedIF215mA
Forward Current (DC) - Double Diode LoadedIF125mA
Repetitive Peak Forward CurrentIFRM450mA
Non-repetitive Peak Forward Surge Current (t = 1 s)IFSM0.5A
Non-repetitive Peak Forward Surge Current (t = 1 ms)IFSM1A
Non-repetitive Peak Forward Surge Current (t = 1 s)IFSM4A
Power DissipationPtot350mW
Operating Junction TemperatureTj150OC
Storage Temperature RangeTstg-65 to +150OC
Forward Voltage (at IF = 1 mA)VF0.715VMax.
Forward Voltage (at IF = 10 mA)VF0.855VMax.
Forward Voltage (at IF = 50 mA)VF1VMax.
Forward Voltage (at IF = 150 mA)VF1.25VMax.
Reverse Current (at VR = 25 V)IR30nAMax.
Reverse Current (at VR = 75 V)IR1AMax.
Reverse Current (at VR = 25 V, TJ = 150 OC)IR30AMax.
Reverse Current (at VR = 75 V, TJ = 150 OC)IR50AMax.
Diode Capacitance (at VR = 0 , f = 1 MHz)Cd2pFMax.
Reverse Recovery Time (at IF = IR = 10 mA, RL = 100 )trr4nsMax.

2410121236_IDCHIP-BAW56_C2848192.pdf

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High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design

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Product Detail
Reverse Leakage Current (Ir) :
1uA@75V
Reverse Recovery Time (trr) :
4ns
Voltage - DC Reverse (Vr) (Max) :
85V
Diode Configuration :
1 Pair Common Anode
Operating Junction Temperature Range :
-
Pd - Power Dissipation :
350mW
Contact Supplier
High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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