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Dual digital transistor ROHM EMG5T2R common emitter type optimized for inverter and interface drivers
Dual digital transistor ROHM EMG5T2R common emitter type optimized for inverter and interface drivers
Specifications
Output Voltage(VO(on)) :
300mV
Input Resistor :
13kΩ
Resistor Ratio :
4.7
Number :
-
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553
Mfr. Part # :
EMG5T2R
Model Number :
EMG5T2R
Package :
SOT-553
Description

Product Overview

The EMG5 / UMG5N is a common emitter dual digital transistor designed for inverter, interface, and driver applications. It integrates two DTC114Y chips within a single EMT or UMT package, significantly reducing mounting costs and board space. This device offers efficient performance with a supply voltage of up to 50V and a maximum collector current of 100mA.

Product Attributes

  • Brand: ROHM
  • Product Series: EMG5 / UMG5N
  • Type: Dual digital transistor (common emitter)

Technical Specifications

Model: EMG5 (SOT-553 / EMT5)
Parameter Symbol Value
Package Size 1616
Reel Size (mm) 180
Tape Width (mm) 8
Basic Ordering Unit (pcs) 8000
Marking G5
Power Dissipation PD*2*3 150 mW/Total
Model: UMG5N (SOT-353 / UMT5)
Parameter Symbol Value
Package Size 2021
Reel Size (mm) 180
Tape Width (mm) 8
Basic Ordering Unit (pcs) 3000
Marking G5
Power Dissipation PD*2*3 150 mW/Total
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common>
Parameter Symbol Values Unit
Supply voltage VCC 50 V
Input voltage VIN -6 to 40 V
Output current IO 70 mA
Collector current IC(MAX)*1 100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common>
Parameter Symbol Conditions Values (Min./Typ./Max.) Unit
Input voltage VI(off) VCC = 5V, IO = 100A - / - / 0.3 V
Input voltage VI(on) VO = 0.3V, IO = 1mA 1.4 / - / - V
Output voltage VO(on) IO = 5mA, II = 0.25mA - / 100 / 300 mV
Input current II VI = 5V - / - / 880 A
Output current IO(off) VCC = 50V, VI = 0V - / - / 500 nA
DC current gain GI VO = 5V, IO = 5mA 68 / - / - -
Input resistance R1 - / 7 / 10 / 13 k
Resistance ratio R2/R1 - / 3.7 / 4.7 / 5.7 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - / 250 / - MHz

2304140030_ROHM-EMG5T2R_C185019.pdf

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Dual digital transistor ROHM EMG5T2R common emitter type optimized for inverter and interface drivers

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Product Detail
Output Voltage(VO(on)) :
300mV
Input Resistor :
13kΩ
Resistor Ratio :
4.7
Number :
-
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-553
Contact Supplier
Dual digital transistor ROHM EMG5T2R common emitter type optimized for inverter and interface drivers

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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