Product Overview
PUMH1 is an NPN/NPN resistor-equipped double transistor (RET) housed in a compact SOT363 (SC-88) surface-mounted plastic package. It offers a 100 mA output current capability and features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia
- Product Type: NPN/NPN Resistor-Equipped Double Transistor
- Package Type: SOT363 (SC-88)
- Resistor Values: R1 = 22 k, R2 = 22 k
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Per transistor |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage | Positive | - | - | 40 | V |
| VI | Input voltage | Negative | - | -10 | - | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Per device |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Thermal characteristics |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | Per device [1] | - | - | 417 | K/W |
| Characteristics |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | Tamb = 25 C | 50 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IC = 0 A; IE = 100 A; Tamb = 25 C | 10 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 180 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 60 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.8 | 1.1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA; Tamb = 25 C | 1.7 | 2.5 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C [1] | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
| Package Outline (SOT363) |
| Body dimensions | - | - | 2.1 x 1.25 x 0.95 | - | - | mm |
| Pitch | - | - | 0.65 | - | - | mm |
2410121948_Nexperia-PUMH1-115_C553527.pdf