| Model | Package | Package Size | VCEO | IC | R1 (Typ.) | Power Dissipation (PD*) | Marking |
|---|---|---|---|---|---|---|---|
| DTA144TM | VMT3 | 1212 | -50V | -100mA | 47k | 150 mW | 96 |
| DTA144TE | EMT3 | 1616 | -50V | -100mA | 47k | 150 mW | 96 |
| DTA144TUA | UMT3 | 2021 | -50V | -100mA | 47k | 200 mW | 96 |
| DTA144TKA | SMT3 | 2928 | -50V | -100mA | 47k | 200 mW | 96 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -0.5 | A |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -0.5 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC / IB = -5mA / -0.5mA | - | - | -0.3 | V |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | - | 32.9 | 61.1 | k |
| Transition frequency | fT*2 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor