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Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor and zener diode protection
Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor and zener diode protection
Specifications
Emitter-Base Voltage VEBO :
5V
Input Resistor :
13kΩ
Number :
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO :
60V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA
Mfr. Part # :
DTDG14GPT100
Model Number :
DTDG14GPT100
Package :
TO-243AA
Description

Product Overview

The DTDG14GP is a digital transistor designed with integrated resistor and zener diode, offering high hFE (300 Min.) and low saturation voltage (400mV max). Its built-in zener diode provides robust protection against reverse surges from inductive loads. This component is suitable for driver applications.

Product Attributes

  • Brand: ROHM
  • Model: DTDG14GP
  • Package: SOT-89 (MPT3)

Technical Specifications

Parameter Symbol Conditions Value Unit
Collector-emitter voltage VCEO 6010 V
Collector current IC 1 A
Resistance R (MPT3) 10k
Collector-base voltage VCBO (Ta = 25C) 6010 V
Collector-emitter voltage VCEO (Ta = 25C) 6010 V
Emitter-base voltage VEBO (Ta = 25C) 5 V
Collector current IC (Ta = 25C) 1 A
Pulsed collector current ICP*1 (Ta = 25C) 2 A
Power dissipation PD*2 (Ta = 25C) 0.5 W
Power dissipation PD*3 (Ta = 25C) 2.0 W
Junction temperature Tj (Ta = 25C) 150
Range of storage temperature Tstg (Ta = 25C) -55 to +150
Collector-base breakdown voltage BVCBO IC = 50A 50 - 70 V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - 70 V
Emitter-base breakdown voltage BVEBO IE = 720A 5 V
Collector cut-off current ICBO VCB = 40V - 500 nA
Emitter cut-off current IEBO VEB = 4V 300 - 580 A
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA - 400 mV
DC current gain hFE VCE = 2V, IC=500mA 300 -
Emitter-base resistance R 7 - 13 k
Transition frequency fT*4 VCE = 5V, IE = -100mA, f = 30MHz - 80 - MHz

*1 Pw10ms, duty=1/2
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40400.7mm ceramic board.
*4 Characteristics of built-in transistor.

Packaging Specifications

Part No. Package Package size (mm) Taping code Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Marking
DTDG14GP SOT-89 (MPT3) 4540 T100 180 12 1000 E01

2109182030_ROHM-DTDG14GPT100_C509303.pdf

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Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor and zener diode protection

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Product Detail
Emitter-Base Voltage VEBO :
5V
Input Resistor :
13kΩ
Number :
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO :
60V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA
Mfr. Part # :
DTDG14GPT100
Contact Supplier
Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor and zener diode protection

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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