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Dual digital transistor power management component ROHM IMD16AT108 designed for SMT package and loss
Dual digital transistor power management component ROHM IMD16AT108 designed for SMT package and loss
Specifications
Emitter-Base Voltage VEBO :
5V
Output Voltage(VO(on)) :
-
Input Resistor :
2.86kΩ
Resistor Ratio :
12
Number :
-
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74
Mfr. Part # :
IMD16AT108
Model Number :
IMD16AT108
Package :
SC-74
Description

Product Overview

The ROHM IMD16A is a power management component featuring dual digital transistors in a SMT package. It is designed to drive up to 500mA and offers low VCE(sat) for reduced power dissipation. This component is suitable for various power management applications.

Product Attributes

  • Brand: ROHM
  • Package Type: SMT6
  • Marking Code: D16
  • Basic Ordering Unit: 3000 pieces

Technical Specifications

IMD16A
Parameter Symbol Value
Features
Two digital class transistors in a SMT package - -
Up to 500mA can be driven IC 500mA (Max)
Low VCE(sat) of drive transistors for low power dissipation VCE(sat) Low
Dimensions (Unit : mm)
Package Dimensions - SMT6 (EIAJ: SC-74)
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC -50 V
Output current IC -12 mA
Input voltage VIN -500 mA
Collector-base voltage (DTr2) VCBO 50 V
Collector-emitter voltage (DTr2) VCEO 50 V
Emitter-base voltage (DTr2) VEBO 5 V
Collector current (DTr2) IC 100 mA
Total Collector power dissipation Pd 300mW (TOTAL)
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C
Electrical Characteristics (Ta=25C)
DTr1 (PNP)
Input voltage (VI(off)) VI(off) -0.3 V (Max)
Input voltage (VI(on)) VI(on) -2 V (Min)
Output voltage (VO(on)) VO(on) -0.3 V (Max)
Input current (II) II -3 A (Max)
Output current (IO(off)) IO(off) -0.5 A (Max)
DC current gain (GI) GI 82 (Min)
Transition frequency (fT) fT 250 MHz (Typ)
Input resistance (R1) R1 2.2 k (Typ)
Resistance ratio (R2 / R1) R2 / R1 1.54 (Min)
DTr2 (NPN)
Collector-base breakdown voltage BVCBO 50 V (Min)
Collector-emitter breakdown voltage BVCEO 50 V (Min)
Emitter-base breakdown voltage BVEBO 5 V (Min)
Collector cutoff current ICBO 0.5 A (Max)
Emitter cutoff current IEBO 0.5 A (Max)
Collector-emitter saturation voltage VCE(sat) 0.3 V (Max)
DC current transfer ratio hFE 100 (Min)
Transition frequency fT 250 MHz (Typ)
Input resistance R1 70 (Min)

2007151837_ROHM-IMD16AT108_C703621.pdf

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Dual digital transistor power management component ROHM IMD16AT108 designed for SMT package and loss

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Product Detail
Emitter-Base Voltage VEBO :
5V
Output Voltage(VO(on)) :
-
Input Resistor :
2.86kΩ
Resistor Ratio :
12
Number :
-
Collector - Emitter Voltage VCEO :
50V
Contact Supplier
Dual digital transistor power management component ROHM IMD16AT108 designed for SMT package and loss

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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