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AEC Q101 Qualified ESD Protection Diode LRC S-LESD32L05T1G with Low Capacitance and RoHS Compliance
AEC Q101 Qualified ESD Protection Diode LRC S-LESD32L05T1G with Low Capacitance and RoHS Compliance
Specifications
Peak Pulse Current (Ipp) :
4A@8/20us
Peak Pulse Power Dissipation (Ppp) :
50W@8/20us
Clamping Voltage :
13V
Junction Capacitance :
0.8pF
Polarity :
Unidirectional
Reverse Stand-Off Voltage (Vrwm) :
5V
Description :
4A@8/20us 50W@8/20us 13V Unidirectional 5V SOT-323 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # :
S-LESD32L05T1G
Model Number :
S-LESD32L05T1G
Package :
SOT-323
Description

Product Overview

The S-LESD32L05T1G is an ESD Protection Diode designed to offer low capacitance and robust ESD protection. It complies with stringent IEC 61000-4-2 standards for both air and contact discharge. This device is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. It also adheres to RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101
  • PPAP Capable: Yes
  • S-prefix: For automotive and other applications requiring unique site and control change requirements

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
IEC 61000-4-2 (ESD)
Air discharge ±30 kV
Contact discharge ±30 kV
Maximum Ratings (Ta = 25ºC)
Peak pulse power @ 8/20 µs PPP 50 W
Peak pulse current @ 8/20 µs IPP 4 A
Storage Temperature Range Tstg -55 +150 ºC
Junction Temperature Range TJ -55 +150 ºC
Electrical Characteristics (Ta = 25ºC)
Working Peak Reverse Voltage VRWM 5.5 V
Breakdown Voltage VBR IT = 1mA 8.5 V
Maximum Reverse Leakage Current IR VRWM = 5V 1 µA
Forward Voltage VF IF = 10mA 1.2 V
Clamping Voltage VC1 IPP = 4A, tp=8/20µs 13 V
Clamping Voltage VC2 IPP = 8A, tp=100ns 11 V
Clamping Voltage VC2 IPP = 16A, tp=100ns 13 V
Junction Capacitance Cj VR = 0V, f = 1MHz 15 pF
Dynamic Resistance RDYN IPP = 4A, tp=100ns 0.4 Ω
Device Marking and Ordering Information
Device Parameter Symbol Marking Shipping Model
ESD Protection Diode 5E 3000/Tape&Reel S-LESD32L05T1G
Outline and Dimensions
DIM MIN NOR MAX
A 0.80 0.95 1.00
A1 0.00 0.05 0.10
A2 0.70 0.90 1.10
b 0.30 0.35 0.40
c 0.10 0.15 0.25
D 1.80 2.05 2.20
E 1.15 1.30 1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.20 0.35 0.56
Soldering Footprint
DIM MIN X Y
A 1.90
B 0.65
C 0.65

2303301000_LRC-S-LESD32L05T1G_C5383077.pdf

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AEC Q101 Qualified ESD Protection Diode LRC S-LESD32L05T1G with Low Capacitance and RoHS Compliance

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Product Detail
Peak Pulse Current (Ipp) :
4A@8/20us
Peak Pulse Power Dissipation (Ppp) :
50W@8/20us
Clamping Voltage :
13V
Junction Capacitance :
0.8pF
Polarity :
Unidirectional
Reverse Stand-Off Voltage (Vrwm) :
5V
Contact Supplier
AEC Q101 Qualified ESD Protection Diode LRC S-LESD32L05T1G with Low Capacitance and RoHS Compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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