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Digital transistor onsemi SMUN5114T1G featuring integrated base and emitter resistors for efficiency
Digital transistor onsemi SMUN5114T1G featuring integrated base and emitter resistors for efficiency
Specifications
Output Voltage(VO(on)) :
200mV
Input Resistor :
13kΩ
Resistor Ratio :
0.21
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 202mW Surface Mount SC-70(SOT-323)
Mfr. Part # :
SMUN5114T1G
Model Number :
SMUN5114T1G
Package :
SC-70(SOT-323)
Description

Product Overview

This series of digital transistors (BRT) integrates a single transistor with a monolithic bias network of two resistors (base and base-emitter) into a single device. This integration simplifies circuit design, reduces board space, and lowers component count, making it an ideal solution for applications requiring reduced system cost and board footprint. The BRT series is designed to replace discrete transistors and their associated biasing resistors.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified (for S and NSV prefix), PPAP Capable (for S and NSV prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

Device Part NumberMarkingPackageCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))R1R2Collector-Emitter Saturation Voltage (VCE(sat))DC Current Gain (hFE)
MUN2114T1G, SMUN2114T1G*6DSC-5950 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140
MMUN2114LT1G, SMMUN2114LT1G*A6DSOT-2350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140
MUN5114T1G, SMUN5114T1G*6DSC-70/SOT-32350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140
DTA114YET1G, SDTA114YET1G*6DSC-7550 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140
DTA114YM3T5G, NSVDTA114YM3T5G*6DSOT-72350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140
NSBA114YF3T5GKSOT-112350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc7.0 - 13 kΩ47 kΩ– 0.25 Vdc80 - 140

2410010231_onsemi-SMUN5114T1G_C894392.pdf

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Digital transistor onsemi SMUN5114T1G featuring integrated base and emitter resistors for efficiency

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Product Detail
Output Voltage(VO(on)) :
200mV
Input Resistor :
13kΩ
Resistor Ratio :
0.21
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 202mW Surface Mount SC-70(SOT-323)
Mfr. Part # :
SMUN5114T1G
Contact Supplier
Digital transistor onsemi SMUN5114T1G featuring integrated base and emitter resistors for efficiency

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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