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N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching
N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching
Specifications
Gate Threshold Voltage (Vgs(th)) :
4V
Operating Temperature :
-55℃~+150℃
type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
18pF
Number :
1 N-channel
Pd - Power Dissipation :
104W
Input Capacitance(Ciss) :
3.75nF
Description :
4V 1 N-channel 104W PowerPAKSO-8 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # :
SIR668ADP-T1-RE3
Model Number :
SIR668ADP-T1-RE3
Package :
PowerPAKSO-8
Description

SiR668ADP N-Channel 100 V (D-S) MOSFET

The SiR668ADP is a high-performance N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It offers a very low RDS(on) x Qg figure-of-merit (FOM), optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control, and battery/load switching.

Product Attributes

  • Brand: Vishay Siliconix
  • Package: PowerPAK SO-8
  • Configuration: Single
  • Material: Lead (Pb)-free and halogen-free

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-source breakdown voltageVDSVGS = 0 V, ID = 250 A100--V
Gate-source threshold voltageVGS(th)VDS = VGS, ID = 250 A2-4V
Zero gate voltage drain currentIDSSVDS = 100 V, VGS = 0 V--1A
Drain-source on-state resistanceRDS(on)VGS = 10 V, ID = 20 A-0.00400.0048
Drain-source on-state resistanceRDS(on)VGS = 7.5 V, ID = 15 A-0.00540.0070
Total gate chargeQgVDS = 50 V, VGS = 10 V, ID = 10 A-5481nC
Total gate chargeQgVDS = 50 V, VGS = 7.5 V, ID = 10 A-4263nC
Continuous drain currentIDTC = 25 C--93.6A
Continuous drain currentIDTC = 70 C--74.8A
Pulsed drain currentIDM(t = 100 s)--200A
Single pulse avalanche currentIASL = 0.1 mH--35A
Single pulse avalanche energyEAS---61.2mJ
Maximum power dissipationPDTC = 25 C--104W
Maximum power dissipationPDTC = 70 C--66.6W
Maximum junction-to-ambient thermal resistanceRthJAt 10 s-1520C/W
Maximum junction-to-case (drain) thermal resistanceRthJCSteady state-0.91.2C/W
Operating junction and storage temperature rangeTJ, Tstg--55-+150C
Soldering recommendations (peak temperature)----260C

2410121815_VISHAY-SIR668ADP-T1-RE3_C5220834.pdf

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N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching

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Product Detail
Gate Threshold Voltage (Vgs(th)) :
4V
Operating Temperature :
-55℃~+150℃
type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
18pF
Number :
1 N-channel
Pd - Power Dissipation :
104W
Contact Supplier
N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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