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Nexperia PDTA115ET215 PNP transistors featuring built in 100k bias resistors for general switching
Nexperia PDTA115ET215 PNP transistors featuring built in 100k bias resistors for general switching
Specifications
Emitter-Base Voltage VEBO :
10V
Input Resistor :
130kΩ
Resistor Ratio :
1.2
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 20mA 250mW Surface Mount SOT-23
Mfr. Part # :
PDTA115ET,215
Model Number :
PDTA115ET,215
Package :
SOT-23
Description

Product Overview

The PDTA115E series are PNP resistor-equipped transistors from NXP Semiconductors. These devices feature built-in bias resistors (R1 = 100 k, R2 = 100 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are suitable for general-purpose switching and amplification, inverter and interface circuits, and circuit driver applications.

Product Attributes

  • Brand: NXP Semiconductors
  • Type: PNP resistor-equipped transistors
  • Built-in Resistors: R1 = 100 k, R2 = 100 k

Technical Specifications

Model Package Marking Code NPN Complement Collector-Emitter Voltage (VCEO) (Max.) Output Current (IO) (DC) (Max.) R1 Bias Resistor (Typ.) R2 Bias Resistor (Typ.)
PDTA115EE SOT416 (SC-75) 5E PDTC115EE -50 V -20 mA 100 k 100 k
PDTA115EEF SOT490 (SC-89) 6B PDTC115EEF -50 V -20 mA 100 k 100 k
PDTA115EK SOT346 (SC-59) 62 PDTC115EK -50 V -20 mA 100 k 100 k
PDTA115EM SOT883 (SC-101) F6 PDTC115EM -50 V -20 mA 100 k 100 k
PDTA115ES SOT54 (TO-92) TA115E PDTC115ES -50 V -20 mA 100 k 100 k
PDTA115ET SOT23 *AB(1) PDTC115ET -50 V -20 mA 100 k 100 k
PDTA115EU SOT323 (SC-70) *7C(1) PDTC115EU -50 V -20 mA 100 k 100 k
Parameter Conditions Min. Typ. Max. Unit
Collector-base voltage (VCBO) open emitter - - -50 V
Collector-emitter voltage (VCEO) open base - - -50 V
Emitter-base voltage (VEBO) open collector - - -10 V
Input voltage (VI) positive - - +10 V
Input voltage (VI) negative - - -40 V
Output current (IO) (DC) - - - -20 mA
Peak collector current (ICM) - - - -100 mA
Total power dissipation (Ptot) Tamb 25 C, SOT23 (note 1) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT54 (note 1) - - 500 mW
Total power dissipation (Ptot) Tamb 25 C, SOT323 (note 1) - - 200 mW
Total power dissipation (Ptot) Tamb 25 C, SOT346 (note 1) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT416 (note 1) - - 150 mW
Total power dissipation (Ptot) Tamb 25 C, SOT490 (notes 1 and 2) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT883 (notes 2 and 3) - - 250 mW
Storage temperature (Tstg) - -65 - +150 C
Junction temperature (Tj) - - - 150 C
Operating ambient temperature (Tamb) - -65 - +150 C
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT23 (note 1) - - 500 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT54 (note 1) - - 250 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT323 (note 1) - - 625 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT346 (note 1) - - 500 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT416 (note 1) - - 833 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT490 (notes 1 and 2) - - 500 K/W
Thermal resistance (Rth(j-a)) Tamb 25 C, SOT883 (notes 2 and 3) - - 500 K/W
Collector-base cut-off current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-emitter cut-off current (ICEO) VCE = -30 V; IB = 0 A - - -1 A
Collector-emitter cut-off current (ICEO) VCE = -30 V; IB = 0 A; Tj = 150 C - - -50 A
Emitter-base cut-off current (IEBO) VEB = -5 V; IC = 0 A - - -50 A
DC current gain (hFE) VCE = -5 V; IC = -5 mA 80 - - -
Collector-emitter saturation voltage (VCEsat) IC = -5 mA; IB = -0.25 mA - - -150 mV
Input-off voltage (Vi(off)) IC = -100 A; VCE = -5 V - -1.2 -0.5 V
Input-on voltage (Vi(on)) IC = -1 mA; VCE = -0.3 V -3 -1.6 - V
R1 input resistor - 70 100 130 k
Resistor ratio (R2/R1) - 0.8 1 1.2 -
Collector capacitance (Cc) IE = ie = 0 A; VCB = -10 V; f = 1 MHz - - 3 pF

2410121948_Nexperia-PDTA115ET-215_C552052.pdf

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Nexperia PDTA115ET215 PNP transistors featuring built in 100k bias resistors for general switching

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Product Detail
Emitter-Base Voltage VEBO :
10V
Input Resistor :
130kΩ
Resistor Ratio :
1.2
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 20mA 250mW Surface Mount SOT-23
Mfr. Part # :
PDTA115ET,215
Contact Supplier
Nexperia PDTA115ET215 PNP transistors featuring built in 100k bias resistors for general switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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