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PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications
PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications
Specifications
Output Voltage(VO(on)) :
300mV
Input Resistor :
4.7kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # :
MMBTRA101SS
Model Number :
MMBTRA101SS
Package :
SOT-23
Description

Product Overview

The MMBTRA series are PNP Silicon Epitaxial Planar Transistors designed for switching and interface circuit applications. They are suitable for drive circuit applications and are available in multiple models with varying resistance and voltage ratings.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: PNP Silicon Epitaxial Planar Transistor
  • Application: Switching and interface circuit, drive circuit

Technical Specifications

Model R1 (K) R2 (K) Output Voltage (-VO) Input Voltage (-VI) Output Current (-IO) Total Power Dissipation (Ptot) Junction Temperature (Tj) Storage Temperature Range (Tstg) DC Current Gain (GI) at -VO = 5 V, -IO = 10 mA (Min.) Output Cutoff Current (-IO(OFF)) at -VO = 50 V (Max.) Input Current (-II) at -VI = 5 V (Typ.) Output Voltage (-VO(ON)) at -IO = 10 mA, -II = 0.5 mA (Max.) Input Voltage (-VI(ON)) at -VO = 0.2 V, -IO = 5 mA (Typ.) Input Voltage (-VI(OFF)) at -VO = 5 V, -IO = 0.1 mA (Typ.) Transition Frequency (fT) at -VO = 10 V, -IO = 5 mA (Typ.)
MMBTRA101SS 4.101 7.4 50 V -20 V 100 mA 200 mW 150 C -55 to +150 C 30 500 nA 1.8 mA 0.3 V 2 V 1 V 200 MHz
MMBTRA102SS 1.102 0.10 50 V -30 V 100 mA 200 mW 150 C -55 to +150 C 50 500 nA 0.88 mA 0.3 V 2.4 V 1 V 200 MHz
MMBTRA103SS 2.103 2.22 50 V -40 V 100 mA 200 mW 150 C -55 to +150 C 70 500 nA 0.36 mA 0.3 V 3 V 1 V 200 MHz
MMBTRA104SS 4.104 7.47 50 V -40 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 0.18 mA 0.3 V 5 V 1 V 200 MHz
MMBTRA105SS 2.105 2.47 50 V -12 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 3.6 mA 0.3 V 1.1 V 0.5 V 200 MHz
MMBTRA106SS 4.106 7.47 50 V -20 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 1.8 mA 0.3 V 1.3 V 0.5 V 200 MHz

2509181520_CBI-MMBTRA101SS_C51814176.pdf

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PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications

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Product Detail
Output Voltage(VO(on)) :
300mV
Input Resistor :
4.7kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # :
MMBTRA101SS
Contact Supplier
PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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