MachineU > China Products
Halogen-free double silicon transistor BLUE ROCKET BRMUN5314WS NPN and PNP types in compact SOT-363 package
Halogen-free double silicon transistor BLUE ROCKET BRMUN5314WS NPN and PNP types in compact SOT-363 package
Specifications
Output Voltage(VO(on)) :
300mV
Resistor Ratio :
4.7
Description :
Pre-Biased Bipolar Transistor (BJT) 100mA 200mW Surface Mount SOT-363
Mfr. Part # :
BRMUN5314WS
Model Number :
BRMUN5314WS
Package :
SOT-363
Description

Product Overview

The BRMUN5314WS is a double silicon NPN and PNP transistor housed in a SOT-363 plastic package. This device features built-in bias resistors, simplifying circuit design, reducing component count, and streamlining manufacturing processes. It is a halogen-free product designed for switching, interface, and driver circuit applications.

Product Attributes

  • Brand: FSBREC
  • Package Type: SOT-363
  • Certifications: Halogen-free

Technical Specifications

Product Model Description Marking
BRMUN5314WS NPN+PNP Digital Transistor H314
Parameter Symbol Rating Unit
Output Voltage VCC 50 V
Input Voltage VIN 40 V
Output Current IC 100 mA
Output Current IO 70 mA
Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Input Voltage(OFF) VI(off) vCC=5.0V, IO=100A 0.3 V
Input Voltage(ON) VI(on) VO=0.3V, IO=1mA 1.4 V
Output Voltage VO(on) IO =5mA, II=0.25mA 0.1 0.3 V
Input Current II VI=5.0V 0.88 mA
Output Cut-off Current IO(off) VCC=50V, VI=0V 0.5 A
DC Current Gain GI VO=5.0V, IO=5.0mA 68
Transition Frequency fT VCE=10V, IC=5.0mA, f=100MHz 250 MHz
Resistance1 R1 7 10 13 K
Resistance Ratio R2/R1 3.7 4.7 5.7
Parameter Symbol Rating Unit
Output Voltage VCC -50 V
Input Voltage VIN -40 V
Output Current IC -100 mA
Output Current IO -70 mA
Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Input Voltage(OFF) VI(off) VCC=-5.0V, IO=-100A -0.3 V
Input Voltage(ON) VI(on) VO=-0.3V, IO=-1.0mA -1.4 V
Output Voltage VO(on) IO =-5.0mA, II=-0.25mA -0.1 -0.3 V
Input Current II VI=-5.0V -0.88 mA
Output Cut-off Current IO(off) VCC=-50V, VI=0 -0.5 A
DC Current Gain GI VO=-5.0V, IO=-5.0mA 68
Transition Frequency fT VCE=-10V, IC=-5.0mA, f=100MHz 250 MHz
Resistance1 R1 7 10 13 K
Resistance Ratio R2/R1 3.7 4.7 5.7
Packaging Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimensions Inner Box Dimensions Outer Box Dimensions
SOT-363 (Reel) 3,000 10 30,000 6 180,000 78 180120180 390385205
Test Condition Temperature Time
Resistance to Soldering Heat 2605 101 sec
Stage Temperature Range Time Range
Preheating 150180 6090 sec
Peak Temp. 2455 50.5 sec
Cooling Speed 210/sec

2411121056_BLUE-ROCKET-BRMUN5314WS_C22400487.pdf

Send your message to this supplier
Send Now

Halogen-free double silicon transistor BLUE ROCKET BRMUN5314WS NPN and PNP types in compact SOT-363 package

Ask Latest Price
Product Detail
Output Voltage(VO(on)) :
300mV
Resistor Ratio :
4.7
Description :
Pre-Biased Bipolar Transistor (BJT) 100mA 200mW Surface Mount SOT-363
Mfr. Part # :
BRMUN5314WS
Model Number :
BRMUN5314WS
Package :
SOT-363
Contact Supplier
Halogen-free double silicon transistor BLUE ROCKET BRMUN5314WS NPN and PNP types in compact SOT-363 package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single, Pre-Biased Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement