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CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching
CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching
Specifications
Input Resistor :
13kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523
Mfr. Part # :
DTC114EE
Model Number :
DTC114EE
Package :
SOT-523
Description

Product Overview

The MMDTC114EE is an NPN Silicon Epitaxial Planar Digital Transistor designed with built-in bias resistors. This feature simplifies circuit design by reducing the quantity of external components and streamlining the manufacturing process. It is suitable for applications requiring digital switching and signal amplification.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Digital Transistor
  • Built-in Components: Bias resistors
  • Design Advantage: Simplified circuit design, reduced part count, and simplified manufacturing process

Technical Specifications

Parameter Symbol Value Unit
Absolute Maximum Ratings (Ta = 25)
Collector Emitter Voltage VCEO 50 V
Input Voltage VI -10 to +40 V
Collector Current IC 100 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150
Characteristics at Ta = 25
DC Current Gain at VCE = 5 V, IC = 5 mA hFE 30 -
Collector Base Cutoff Current at VCB = 50 V ICBO - 500 nA
Emitter Base Cutoff Current at VEB = 5 V IEBO - 0.88 mA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCE(sat) - 0.3 V
Input on Voltage at VCE = 0.3 V, IC = 10 mA VI(on) - 3 V
Input off Voltage at VCE = 5 V, IC = 100 A VI(off) 0.5 - V
Transition frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz fT - 250 MHz
Input Resistance R1 7 to 13 K
Resistance Ratio R2 / R1 0.8 to 1.2 -

2410121306_CBI-DTC114EE_C2828438.pdf

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CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching

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Product Detail
Input Resistor :
13kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523
Mfr. Part # :
DTC114EE
Model Number :
DTC114EE
Contact Supplier
CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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