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Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network
Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network
Specifications
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 385mW Surface Mount SOT-363
Mfr. Part # :
MMUN5235DW
Model Number :
MMUN5235DW
Package :
SOT-363
Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. Designed for low power surface mount applications where board space is limited, the MMUN5211DW series offers reduced component count and board space utilization. The product material complies with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Origin: China
  • Material Compliance: RoHS
  • Package Type: SOT-363

Technical Specifications

Model Package Marking R1 (K) R2 (K) Shipping
MMUN5211DW SOT-363 7A 10 10 3000/Tape&Reel
MMUN5214DW SOT-363 7D 10 47 3000/Tape&Reel
MMUN5215DW SOT-363 7E 10 - 3000/Tape&Reel
MMUN5216DW SOT-363 7F 4.7 - 3000/Tape&Reel
MMUN5230DW SOT-363 7G 1 1 3000/Tape&Reel
MMUN5231DW SOT-363 7H 2.2 2.2 3000/Tape&Reel
MMUN5232DW SOT-363 7J 4.7 4.7 3000/Tape&Reel
MMUN5233DW SOT-363 7K 4.7 47 3000/Tape&Reel
MMUN5234DW SOT-363 7L 22 47 3000/Tape&Reel
MMUN5235DW SOT-363 7M 2.2 47 3000/Tape&Reel
MMUN5238DW SOT-363 7Q 2.2 - 3000/Tape&Reel
MMUN5241DW SOT-363 7T 100 - 3000/Tape&Reel
MMUN5212DW SOT-363 7B 22 22 3000/Tape&Reel
MMUN5213DW SOT-363 7C 47 47 3000/Tape&Reel
Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (One Junction Heated) PD 187 mW TA= 25C, Note 1
Total Device Dissipation (Both Junctions Heated) PD 250 mW TA= 25C, Note 1
Junction-to-Ambient Thermal Resistance (One Junction Heated) RJA 670 C/W Note 1
Junction-to-Ambient Thermal Resistance (Both Junctions Heated) RJA 493 C/W Note 1
Junction-to-Lead Thermal Resistance RJL 188 C/W Note 1
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Collector Base Cutoff Current ICBO -100 nA VCB = 50 V
Collector Emitter Cutoff Current ICEO -500 nA VCE = 50 V
Collector Base Breakdown Voltage V(BR)CBO 50 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 50 V IC = 2 mA
Collector Emitter Saturation Voltage (IC=10mA, IB=0.3mA) VCEsat 0.25 V MMUN5230DW, MMUN5231DW
Collector Emitter Saturation Voltage (IC=10mA, IB=5mA) VCEsat 0.25 V MMUN5215DW, MMUN5216DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (on) (VCC=5V, VB=2.5V, RL=1K) VOL 0.2 V MMUN5211DW, MMUN5212DW, MMUN5214DW, MMUN5215DW, MMUN5216DW, MMUN5230DW, MMUN5231DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (on) (VCC=5V, VB=3.5V, RL=1K) VOL 0.2 V MMUN5213DW
Output Voltage (on) (VCC=5V, VB=5V, RL=1K) VOL 0.2 V MMUN5241DW
Output Voltage (off) (VCC=5V, VB=0.5V, RL=1K) VOH 4.9 V MMUN5211DW, MMUN5212DW, MMUN5214DW, MMUN5215DW, MMUN5216DW, MMUN5230DW, MMUN5231DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (off) (VCC=5V, VB=0.05V, RL=1K) VOH 4.9 V MMUN5230DW
Output Voltage (off) (VCC=5V, VB=0.25V, RL=1K) VOH 4.9 V MMUN5215DW, MMUN5216DW, MMUN5233DW, MMUN5238DW
Model Input Resistor R1 Unit Resistor Ratio R1/R2 Unit
MMUN5211DW 7 K 0.8
MMUN5212DW 22 K 0.8
MMUN5213DW 47 K 0.17
MMUN5214DW 10 K 0.17
MMUN5215DW 10 K -
MMUN5216DW 4.7 K -
MMUN5230DW 1 K 0.8
MMUN5231DW 2.2 K 0.055
MMUN5232DW 4.7 K 0.38
MMUN5233DW 4.7 K 0.055
MMUN5234DW 22 K 0.38
MMUN5235DW 2.2 K 0.38
MMUN5238DW 2.2 K -
MMUN5241DW 100 K -

Notes:

  • 1. FR-4 @ Minimum Pad
  • 2. FR-4 @ 1.0 x 1.0 inch Pad

2410121707_CBI-MMUN5235DW_C21714287.pdf
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Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network

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Product Detail
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 385mW Surface Mount SOT-363
Mfr. Part # :
MMUN5235DW
Model Number :
MMUN5235DW
Package :
SOT-363
Contact Supplier
Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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