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NPN PNP Transistor Array Infineon BCR22PNH6327XTSA1 with Built in Resistors and Compact SOT363 Package
NPN PNP Transistor Array Infineon BCR22PNH6327XTSA1 with Built in Resistors and Compact SOT363 Package
Specifications
Output Voltage(VO(on)) :
-
Input Resistor :
22kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6
Mfr. Part # :
BCR22PNH6327XTSA1
Model Number :
BCR22PNH6327XTSA1
Package :
SOT-363-6
Description

Product Overview

The BCR22PN is an NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=22 k, R2=22 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact SOT363 package.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: AEC Q101, RoHS compliant

Technical Specifications

ParameterSymbolNPN/PNP TypeValueUnitConditions
Maximum RatingsVCEOCollector-emitter voltage50V
VCBOCollector-base voltage50V
Vi(fwd)Input forward voltage60V
Vi(rev)Input reverse voltage10V
ICDC collector current100mA
PtotTotal power dissipation250mWTS = 115 C
TjJunction temperature150C
DC CharacteristicsV(BR)CEOCollector-emitter breakdown voltage50VIC = 100 A, IB = 0
V(BR)CBOCollector-base breakdown voltage50VIC = 10 A, IE = 0
ICBOCollector cutoff current-100nAVCB = 40 V, IE = 0
IEBOEmitter cutoff current-350AVEB = 10 V, IC = 0
hFEDC current gain50-IC = 5 mA, VCE = 5 V
VCEsatCollector-emitter saturation voltage-0.3VIC = 10 mA, IB = 0.5 mA
Vi(off)Input off voltage0.81.5VIC = 100 A, VCE = 5 V
Vi(on)Input on Voltage12.5VIC = 2 mA, VCE = 0.3 V
R1Input resistor152229k
R1/R2Resistor ratio0.911.1-
AC CharacteristicsfTTransition frequency-130MHzIC = 10 mA, VCE = 5 V, f = 100 MHz
CcbCollector-base capacitance-3pFVCB = 10 V, f = 1 MHz

2410121930_Infineon-BCR22PNH6327XTSA1_C672245.pdf

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NPN PNP Transistor Array Infineon BCR22PNH6327XTSA1 with Built in Resistors and Compact SOT363 Package

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Product Detail
Output Voltage(VO(on)) :
-
Input Resistor :
22kΩ
Resistor Ratio :
1
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6
Mfr. Part # :
BCR22PNH6327XTSA1
Contact Supplier
NPN PNP Transistor Array Infineon BCR22PNH6327XTSA1 with Built in Resistors and Compact SOT363 Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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