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Nexperia PDTC143EU 115 NPN Resistor Equipped Transistor Compact SMD Package for Circuit Integration
Nexperia PDTC143EU 115 NPN Resistor Equipped Transistor Compact SMD Package for Circuit Integration
Specifications
Emitter-Base Voltage VEBO :
10V
Input Resistor :
6.1kΩ
Resistor Ratio :
1.2
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323
Mfr. Part # :
PDTC143EU,115
Model Number :
PDTC143EU,115
Package :
SOT-323
Description

Product Overview

The Nexperia PDTC143E series comprises NPN Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These transistors are designed to reduce component count and simplify circuit design with their built-in bias resistors, leading to lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTC143E series offers a cost-saving alternative to traditional BC847/857 series in digital applications, and is ideal for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 qualified
  • Resistor Values: R1 = 4.7 k, R2 = 4.7 k

Technical Specifications

Model Package Description Collector-Emitter Voltage (VCEO) Output Current (IO) Bias Resistor R1 (Typ) Bias Resistor Ratio R2/R1 (Typ)
PDTC143EE SOT416 (SC-75) Ultra small 50 V 100 mA 4.7 k 1
PDTC143EM SOT883 (SC-101) Leadless ultra small 50 V 100 mA 4.7 k 1
PDTC143ET SOT23 (TO-236AB) Small 50 V 100 mA 4.7 k 1
PDTC143EU SOT323 (SC-70) Very small 50 V 100 mA 4.7 k 1
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage Positive - - +30 V
VI Input voltage Negative - - -10 V
ICM Peak collector current Single pulse; tp 1 ms - - 100 mA
Ptot Total power dissipation Tamb 25 C (PDTC143EE SOT416) - - 150 mW
Ptot Total power dissipation Tamb 25 C (PDTC143EM SOT883) - - 250 mW
Ptot Total power dissipation Tamb 25 C (PDTC143ET SOT23) - - 250 mW
Ptot Total power dissipation Tamb 25 C (PDTC143EU SOT323) - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C

2410121755_Nexperia-PDTC143EU-115_C131678.pdf

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Nexperia PDTC143EU 115 NPN Resistor Equipped Transistor Compact SMD Package for Circuit Integration

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Product Detail
Emitter-Base Voltage VEBO :
10V
Input Resistor :
6.1kΩ
Resistor Ratio :
1.2
Collector - Emitter Voltage VCEO :
50V
Description :
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323
Mfr. Part # :
PDTC143EU,115
Contact Supplier
Nexperia PDTC143EU 115 NPN Resistor Equipped Transistor Compact SMD Package for Circuit Integration

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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