The AIP3D15A060Q4T and AIP3P15A060Q4T are intelligent power modules (IPMs) designed for 3-phase inverter applications. These modules feature Trench Shielded Planar Gate IGBTs with a 600V-15A rating. The AIP3P15A060Q4T variant includes an optional built-in PFC diode with low VF and ultra-fast recovery characteristics. Key integrated protections include control supply under-voltage lockout (UVLO), controllable over-temperature protection (OT), temperature monitoring (VOT), short-circuit current protection (CSC), and a controllable fault out signal (VCF). They also offer an enable input functionality for shutting down low-side IGBTs. The input interface supports 3 and 5V lines with Schmitt trigger receiver circuits. These modules are suitable for AC 100-240Vrms class low power motor drives, including air conditioners, washing machines, compressors, and fan motors.
| Model | External View Size (mm) | Features | Temperature Range (C) | Package Terminal Type | Isolation Rating (Vrms/min) |
|---|---|---|---|---|---|
| AIP3D15A060Q4T | 38 x 24 x 3.6 | 3-phase inverter module, 600V-15A (Trench Shielded Planar Gate IGBT), Built-in bootstrap diodes, UVLO, OT, VOT, CSC, VCF, Enable input. | -40 to 150 | IPM-3E Long with stopper | 2000 |
| AIP3P15A060Q4T | 38 x 24 x 3.6 | 3-phase inverter module with optional built-in PFC diode, 600V-15A (Trench Shielded Planar Gate IGBT), Low VF and Ultra-fast recovery diode for PFC, Built-in bootstrap diodes, UVLO, OT, VOT, CSC, VCF, Enable input. | -40 to 150 | IPM-3F Long with stopper | 2000 |
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Inverter VPN Supply Voltage | Applied between P - NU,NV,NW | 450 | V | ||
| Inverter VPN(surge) Supply Voltage | Applied between P - NU,NV,NW | 500 | V | ||
| VCES Collector-Emitter Voltage | 600 | V | |||
| IC Output Phase Current | TC=25C, TJ<150C | 15 | A | ||
| IC Output Phase Current | TC=80C, TJ<150C | 10 | A | ||
| IPK Output Peak Phase Current | TC=25C, less than 1ms pulse width | 30 | A | ||
| tSC Short Circuit Withstand Time | VPN400V, TJ=150C, VDD=15V | 5 | s | ||
| PC Collector Dissipation | TC=25C, per chip | 33 | W | ||
| TJ Operating Junction Temperature | -40 | 150 | C | ||
| PFC Diode VRRM Repetitive peak Reverse Voltage | Applied between P2 P3 | 650 | V | ||
| PFC Diode IF Output Phase Current | TC=25C, TJ<150C | 30 | A | ||
| PFC Diode IF Output Phase Current | TC=100C, TJ<150C | 15 | A | ||
| VDD Control Supply Voltage | Applied between VDD-COM | 25 | V | ||
| VDB High-Side Control Bias Voltage | Applied between VB(U)-U, VB(V)-V, VB(W)-W | 25 | V | ||
| VIN Input Voltage | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) COM | VDD+0.3 | V | ||
| VCF Fault Output Supply Voltage | Applied between VCF-COM | COM+5.5 | V | ||
| ICF Fault Output Current | Sink current at VCF terminal | 1 | mA | ||
| VSC Current Sensing Input Voltage | Applied between CSC-COM | COM+5.5 | V | ||
| VOT Temperature Output | Applied between VOT-COM | COM+5.5 | V | ||
| TC Module Case Operation Temperature | Measurement point of TC is provided in Figure 1 | -30 | 125 | C | |
| TSTG Storage Temperature | -40 | 150 | C | ||
| VISO Isolation Voltage | 60Hz, sinusoidal, AC 1min, between connected all pins and heat sink plate | 2000 | Vrms | ||
| Thermal Resistance | |||||
| Rth(j-c)Q Junction to Case Thermal Resistance (1) | Inverter IGBT (per 1/6 module) | 3.8 | K/W | ||
| Rth(j-c)F Inverter FWD (per 1/6 module) | 4.97 | K/W | |||
| Rth(j-c)D PFC Diode (AIP3P15A060Q4T) | 2.58 | K/W | |||
| Electrical Characteristics | |||||
| VCE(SAT) Collector-Emitter Saturation Voltage | VDD=VDB=15V, VIN=5V, IC=7.5A, TJ=25C | 1.40 | 1.90 | V | |
| VCE(SAT) Collector-Emitter Saturation Voltage | IC=7.5A, TJ=125C | 1.60 | - | V | |
| VF FWD Forward Voltage | VIN=0, IF=7.5A, TJ=25C | 1.55 | 2.00 | V | |
| tON Switching Times | VPN=300V, VDD=VDB=15V, IC=10A, TJ=25C, VIN=0V 5V Inductive load | 0.40 | 0.70 | 1.20 | s |
| tC(ON) | 0.15 | 0.40 | s | ||
| tOFF | 1.25 | 1.75 | s | ||
| tC(OFF) | 0.10 | 0.30 | s | ||
| trr | 0.10 | - | s | ||
| ICES Collector-Emitter Leakage Current | VCE=VCES, TJ=25C | - | 1 | mA | |
| ICES Collector-Emitter Leakage Current | VCE=VCES, TJ=125C | - | 10 | mA | |
| VF FWD Forward Voltage | IF=20A, TJ=25C | 1.45 | - | V | |
| Trr Reverse recovery time | TJ=25C, VR=400V, IF=20A, dIF/dt=300A/us | 55 | ns | ||
| Qrr Reverse recovery Charge | 0.55 | uC | |||
| Irr Peak reverse recovery current | 16 | A | |||
| Control (Protection) | |||||
| IQDD Quiescent VDD Supply Current | VDD=15V, IN(UH,VH,WH,UL,VL,WL) =0V | - | 2.1 | mA | |
| IQDB Quiescent VDB Supply Current | VDB=15V, IN(UH, VH, WH)=0V | - | 0.3 | mA | |
| VSC(ref) Short-Circuit Trip Level | VDD=15V (2) | 0.455 | 0.48 | 0.505 | V |
| UVDT Supply Circuit Under-Voltage Protection Trip Level | 10.3 | 11.4 | 12.5 | V | |
| UVDR Reset Level | 10.8 | 11.9 | 13.0 | V | |
| UVDBT Trip Level | 8.5 | 9.5 | 10.5 | V | |
| UVDBR Reset Level | 9.5 | 10.5 | 11.5 | V | |
| VOT Temperature Output | LVIC Temperature=90C (3) | 2.67 | 2.77 | 2.86 | V |
| VOT Temperature Output | LVIC Temperature=25C (3) | 0.8 | 1.05 | 1.3 | V |
| OTT Over-Temperature Protection | The OT Pin is connected to VDD or open (4) | 100 | 120 | 140 | C |
| OTHYS Hysteresis of Trip Reset | - | 30 | - | C | |
| VCFH Fault Output Voltage | VSC=0V, VCF Circuit: 10k to 5V pull-up | 4.9 | - | - | V |
| VCFL Fault Output Voltage | VSC=1V, VCF Circuit: 10k to 5V pull-up | - | - | 0.5 | V |
| VCF+ CF positive going threshold | - | 1.9 | 2.2 | V | |
| VCF- CF negative going threshold | 0.8 | 1.1 | - | V | |
| tFO Fault Output Pulse Width | Pull-up resistor only (5) | 20 | - | - | s |
| tFO Fault Output Pulse Width | Pull-up resistor with pull-down capacitor (RCF=2.2M, CCF=1nF, 5V pull-up) (Figure 5) (5) | - | 1 | - | ms |
| IIN Input Current | VIN=5V | 0.72 | - | mA | |
| Vth(on) ON Threshold Voltage | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)-COM | 2.3 | 2.6 | - | V |
| Vth(off) OFF Threshold Voltage | 0.8 | 1.2 | - | V | |
| Vth(hys) ON/OFF Threshold Hysteresis Voltage | - | 1.1 | - | V | |
| VF(BSD) Bootstrap Diode Forward Voltage | IF=10mA Including Voltage Drop by Limiting Resistor (6) | 0.5 | 1.0 | 1.5 | V |
| RBSD Built-in Limiting Resistance | Included in Bootstrap Diode | 80 | 100 | 120 | |
| Recommended Operation Conditions | |||||
| VPN Supply Voltage | Applied between P-NU, NV, NW | 0 | 300 | 400 | V |
| VDD Control Supply Voltage | Applied between VDD-COM | 13.5 | 15.0 | 16.5 | V |
| VDB High-Side Bias Voltage | Applied between VB(U)-U, VB(V)-V, VB(W)-W | 13.5 | 15.0 | 18.5 | V |
| dVDD/dt, dVDB/dt Control Supply Variation | -1 | - | +1 | V/s | |
| tded Arm Shoot-Through Blocking Time | For each input signal | 1.0 | - | - | s |
| fPWM PWM Input Frequency | -40C < TJ < 150C | - | - | 20 | kHz |
| PWIN(ON) Minimum Input Pulse Width (8) | 0.5 | - | - | s | |
| PWIN(OFF) | 0.5 | - | - | s | |
| COM Variation | Between COM-NU, NV, NW (including surge) | -5.0 | - | 5.0 | V |
Notes: