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Switching diode in SOT363 package Guangdong Hottech BAV99S designed for high speed switching circuits
Switching diode in SOT363 package Guangdong Hottech BAV99S designed for high speed switching circuits
Specifications
Non-Repetitive Peak Forward Surge Current :
4A
Reverse Leakage Current (Ir) :
1uA
Reverse Recovery Time (trr) :
4ns
Voltage - DC Reverse (Vr) (Max) :
75V
Pd - Power Dissipation :
200mW
Voltage - Forward(Vf@If) :
1V@150mA
Description :
4A 4ns 75V 1V@150mA SOT-363 Single Diodes RoHS
Mfr. Part # :
BAV99S
Model Number :
BAV99S
Package :
SOT-363
Description

BAV99S Switching Diode

The BAV99S is a high-performance switching diode designed for fast switching applications. It offers high conductance and is presented as a surface mount device in the SOT-363 package, making it suitable for high-speed switching circuits.

Product Attributes

  • Case: SOT-363
  • Case material: Molded plastic
  • UL flammability Classification rating: 94V-0
  • Weight: 0.008 grams (approximate)

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Repetitive Peak Reverse Voltage VRRM 85 V (Ta = 25)
Reverse Voltage VR 75 V (Ta = 25)
Continuous Forward Current (Single Diode Load) IF 150 mA (Ta = 25)
Continuous Forward Current (Double Diode Load) IF 130 mA (Ta = 25)
Repetitive Peak Forward Current IFRM 500 mA (Ta = 25)
Non-Repetitive Peak Forward Surge Current (at t = 1 s) IFSM 4 A (Ta = 25)
Non-Repetitive Peak Forward Surge Current (at t = 1 ms) IFSM 1 A (Ta = 25)
Non-Repetitive Peak Forward Surge Current (at t = 1 s) IFSM 0.5 A (Ta = 25)
Total Power Dissipation Ptot 200 mW (Ta = 25)
Thermal Resistance from Junction to Ambient RJA 625 /W (Ta = 25)
Junction Temperature Tj 150 (Ta = 25)
Storage Temperature Range Tstg -55 to +150 (Ta = 25)
Characteristics
Forward Voltage (at IF = 1 mA) VF 0.715 V (Ta = 25)
Forward Voltage (at IF = 10 mA) VF 0.855 V (Ta = 25)
Forward Voltage (at IF = 50 mA) VF 1 V (Ta = 25)
Forward Voltage (at IF = 150 mA) VF 1.25 V (Ta = 25)
Reverse Current (at VR = 25 V) IR 30 nA (Ta = 25)
Reverse Current (at VR = 75 V) IR 1 A (Ta = 25)
Reverse Current (at VR = 25 V, Tj = 150) IR 30 A (Ta = 25)
Reverse Current (at VR = 75 V, Tj = 150) IR 50 A (Ta = 25)
Diode Capacitance (at VR = 0, f = 1 MHz) Cd 1.5 pF (Ta = 25)
Reverse Recovery Time (at IF = 10 mA, IR = 10 mA, Irr = 0.1 X IR, RL = 100 ) trr 4 ns (Ta = 25)

2507111630_Guangdong-Hottech-BAV99S_C49238179.pdf

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Switching diode in SOT363 package Guangdong Hottech BAV99S designed for high speed switching circuits

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Product Detail
Non-Repetitive Peak Forward Surge Current :
4A
Reverse Leakage Current (Ir) :
1uA
Reverse Recovery Time (trr) :
4ns
Voltage - DC Reverse (Vr) (Max) :
75V
Pd - Power Dissipation :
200mW
Voltage - Forward(Vf@If) :
1V@150mA
Contact Supplier
Switching diode in SOT363 package Guangdong Hottech BAV99S designed for high speed switching circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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