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Silicon Carbide Diode FUXINSEMI F3C10065A with Low Heat Sink Requirement and High Reliability
Silicon Carbide Diode FUXINSEMI F3C10065A with Low Heat Sink Requirement and High Reliability
Specifications
Reverse Leakage Current (Ir) :
12uA@650V
Diode Configuration :
Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.5V@10A
Current - Rectified :
30A
Description :
SiC Diode Independent 650V 30A Through Hole TO-220-2
Mfr. Part # :
F3C10065A
Model Number :
F3C10065A
Package :
TO-220-2
Description

Product Overview

The F3C10065A is a 650-Volt Silicon Carbide Schottky Diode designed for high-frequency operation with zero reverse and forward recovery characteristics. Its temperature-independent switching behavior and extremely fast switching capabilities contribute to higher efficiency and reduced heat sink requirements. This unipolar rectifier is ideal for replacing bipolar rectifiers in demanding applications such as Switch Mode Power Supplies, Power Factor Correction, and Motor Drives, offering parallel operation without thermal runaway.

Product Attributes

  • Brand: Fuxin Semiconductor
  • Material: Silicon Carbide
  • Package Type: TO-220-2 (TO-220AC)
  • RoHS Status: Pb e3

Technical Specifications

Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 650 V
VRSM Surge Peak Reverse Voltage 650 V
VDC DC Blocking Voltage 650 V
IF Continuous Forward Current 30 A TC=25C Fig. 3
14.5 A TC=135C Fig. 3
10 A TC=153C Fig. 3
IFRM Repetitive Peak Forward Surge Current 46 A TC=25C, tP= 10 ms, Half Sine Wave Fig. 8
31 A TC=110C, tP= 10 ms, Half Sine Wave Fig. 8
IFSM Non-Repetitive Peak Forward Surge Current 90 A TC=25C, tp = 10 ms, Half Sine Wave Fig. 8
71 A TC=110C, tp = 10 ms, Half Sine Wave Fig. 8
IF,Max Non-Repetitive Peak Forward Surge Current 860 A TC=25C, tP = 10 s, Pulse Fig. 8
680 A TC=110C, tP = 10 s, Pulse Fig. 8
Ptot Power Dissipation 136.5 W TC=25C Fig. 4
59 W TC=110C Fig. 4
TJ , Tstg Operating Junction and Storage Temperature -55 to +175 C
Mounting Torque 1 Nm M3 Screw
Mounting Torque 8.8 lbf-in 6-32 Screw
VF Forward Voltage 1.5 - 2.0 V IF = 10 A, TJ=25C Fig. 1
VF Forward Voltage 1.8 - 2.4 V IF = 10 A, TJ=175C Fig. 1
IR Reverse Current 12 - 60 A VR = 650 V, TJ=25C Fig. 2
24 - 220 A VR = 650 V, TJ=175C Fig. 2
QC Total Capacitive Charge 24 nC VR = 400 V, IF = 10 A, di/dt = 500 A/s, TJ = 25C Fig. 5
C Total Capacitance 460.5 pF VR = 0 V, TJ= 25C, f = 1 MHz Fig. 6
44 pF VR = 200 V, TJ= 25C, f = 1 MHz Fig. 6
40 pF VR = 400 V, TJ= 25C, f = 1 MHz Fig. 6
EC Capacitance Stored Energy 3.6 J VR = 400 V Fig. 7
RJC Thermal Resistance from Junction to Case 1.1 C/W Fig. 9

2103261833_FUXINSEMI-F3C10065A_C784608.pdf

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Silicon Carbide Diode FUXINSEMI F3C10065A with Low Heat Sink Requirement and High Reliability

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Product Detail
Reverse Leakage Current (Ir) :
12uA@650V
Diode Configuration :
Independent
Voltage - DC Reverse (Vr) (Max) :
650V
Voltage - Forward(Vf@If) :
1.5V@10A
Current - Rectified :
30A
Description :
SiC Diode Independent 650V 30A Through Hole TO-220-2
Contact Supplier
Silicon Carbide Diode FUXINSEMI F3C10065A with Low Heat Sink Requirement and High Reliability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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