The DAN222 is a high-speed switching diode in a SOT-523 plastic-encapsulated package. It offers high reliability and is suitable for high packing density layouts. Available in four types of packaging, this diode is designed for efficient switching applications.
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR= 100A | 80 | V | |
| Reverse voltage leakage current | IR | VR=70V | 0.1 | A | |
| Forward voltage | VF | IF=100mA | 1.2 | V | |
| Diode capacitance | CD | VR=0, f=1MHz | 3.5 | pF | |
| Reverse recovery time | trr | VR=6V, IF=IR=5mA | 4 | ns | |
| Non-Repetitive Peak Reverse Voltage | VRM | @Ta=25 | 80 | V | |
| DC Blocking Voltage | VR | @Ta=25 | 80 | V | |
| Forward Continuous Current | IFM | @Ta=25 | 300 | mA | |
| Average Rectified Output Current | IO | @Ta=25 | 100 | mA | |
| Power Dissipation | PD | @Ta=25 | 150 | mW | |
| Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | ||
| Thermal resistance (Junction to ambient) | RJA | 833 | /W | ||
| Forward Surge Current (Non-Repetitive Peak, @t=8.3ms) | IFSM | 2.0 | A |