The BAV99W is a high-speed switching diode designed for demanding applications. Its series connection offers advantages in specific circuit designs, making it suitable for fast switching operations.
| Parameter | Symbol | Conditions | Limit | Unit | |
|---|---|---|---|---|---|
| Reverse Voltage | VR | @Ta=25 | 75 | V | |
| Forward Current | IF | @Ta=25 | 150 | mA | |
| Forward Surge Current (Non-Repetitive Peak) | IFSM | @t=8.3ms | 2.0 | A | |
| Power Dissipation | PD | @Ta=25 | 200 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55~+150 | |||
| Reverse breakdown voltage | V(BR) | IR= 100A | 75 | V | |
| Reverse voltage leakage current | IR1 | VR=75V | A | ||
| Reverse voltage leakage current | IR2 | VR=25V | 25 | nA | |
| Forward voltage | VF | IF=1mA | 715 | mV | |
| Forward voltage | VF | IF=10mA | 855 | mV | |
| Forward voltage | VF | IF=50mA | 1000 | mV | |
| Forward voltage | VF | IF=150mA | 1250 | mV | |
| Diode capacitance | CD | VR=0 f=1MHz | 2 | pF | |
| Reverse recovery time | trr | IF=IR=10mA Irr=0.1IR,RL=100 | 4 | ns |