The BAP50-03 is a general purpose pin diode designed for various applications. It features low diode capacitance and low diode forward resistance, making it suitable for signal switching and modulation circuits. The diode is marked with 'A81' and is available in a SOD-323 package.
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Maximum Ratings and Electrical Characteristics | ||||||
| Continuous Reverse Voltage | VR | 50 | V | @Ta=25 | ||
| Continuous Forward Current | IF | 50 | mA | @Ta=25 | ||
| Power Dissipation | PD | 200 | mW | @Ta=25 | ||
| Thermal Resistance Junction to Ambient | RJA | 85 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Electrical Ratings | ||||||
| Continuous reverse voltage | VR | 50 | V | IR=10A | ||
| Forward voltage | VF | 1.1 | V | IF=50mA | ||
| Reverse current | IR | 100 | nA | VR=50V | ||
| Diode capacitance | Cd1 | 0.91 | pF | VR=0V,f=1MHz | ||
| Diode capacitance | Cd2 | 0.55 | pF | VR=1V,f=1MHz | ||
| Diode capacitance | Cd3 | 0.35 | pF | VR=5V,f=1MHz | ||
| Diode forward resistance | rD | 40 | IF=0.5mA, f=100MHz | |||
| Diode forward resistance | rD | 25 | IF=1mA, f=100MHz | |||
| Diode forward resistance | rD | 5 | IF=10mA, f=100MHz | |||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 1.100 | 0.043 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.800 | 1.000 | 0.031 | 0.039 |
| b | 0.250 | 0.350 | 0.010 | 0.014 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 1.200 | 1.400 | 0.047 | 0.055 |
| E | 1.600 | 1.800 | 0.063 | 0.071 |
| E1 | 2.500 | 2.750 | 0.098 | 0.108 |
| L | ||||
| L1 | 0.250 | 0.400 | 0.010 | 0.016 |
| 0 | 8 | 0 | 8 | |
| 0.475 REF | 0.019 REF | |||
Note: The marking bar indicates the cathode. The solid dot indicates a green molding compound device; if none, it is the normal device.