The BAP64-04, 05, and 06 are high voltage, current-controlled pin diodes designed for RF applications. They function as RF resistors in attenuators and switches, offering low diode capacitance, low forward resistance, and low series inductance. These diodes are suitable for applications operating up to 3 GHz.
| Parameter | Symbol | BAP64-04/05/06 | Unit | Conditions |
| Continuous reverse voltage | VR | 175 | V | |
| Continuous forward current | IF | 100 | mA | |
| Power dissipation | PD | 250 | mW | Ta=25 |
| Thermal resistance from junction to ambient | RJA | 500 | /W | |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 | ||
| Forward Voltage | VF | 1.1 | V | IF=50mA |
| Reverse Current | IR1 | 10 | VR1=175V | |
| Reverse Current | IR2 | 1 | A | VR2=20V |
| Diode Capacitance | Cd1 | 0.52 | pF | VR=0V, f=1MHz |
| Diode Capacitance | Cd2 | 0.5 | pF | VR=1V,f=1MHz |
| Diode Capacitance | Cd3 | 0.35 | pF | VR=20V,f=1MHz |
| Diode Forward Resistance | Rd1 | 40 | IF=0.5mA, f=100MHz | |
| Diode Forward Resistance | Rd2 | 20 | IF=1mA, f=100MHz | |
| Diode Forward Resistance | Rd3 | 3.8 | IF=10mA, f=100MHz | |
| Diode Forward Resistance | Rd4 | 1.35 | IF=100mA, f=100MHz | |
| Charge Carrier Life Time | L | 1.55 | s | When switched from IF =10mA to IR=6mA;RL=100;measured at IR =3mA |
| Series Inductance | LS | 1.4 | nH | IF=10mA, f=100MHz |