Product Overview
This product is a plastic-encapsulated Schottky barrier diode array designed for applications requiring low forward voltage drop and fast switching speeds. It is suitable for general-purpose rectification and switching circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Plastic-Encapsulate Transistors SCHOTTKY BARRIER DIODE ARRAYS
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | MAX | Unit |
| Non-Repetitive Peak reverse voltage | VRM | | | 40 | V |
| DC Blocking Voltage | VR | | | 40 | V |
| Average Rectified Output Current | IO | | | 200 | mA |
| Power Dissipation | Pd | | | 200 | mW |
| Thermal Resistance. Junction to Ambient Air | RJA | | | 625 | /W |
| Junction temperature | TJ | | | 125 | |
| Storage temperature range | TSTG | | -65 | 125 | |
| Reverse breakdown voltage | V(BR) | IR= 10A | 40 | | V |
| Reverse voltage leakage current | IR | VR=30V | | 200 | nA |
| Forward voltage | | VF | IF=1mA | | 380 | mV |
| VF | IF=40mA | | 1000 | mV |
| Total capacitance | CT | VR=0,f=1MHz | | 5 | pF |
| Reverse recovery time | trr | IF=10mA, IR=IF=1mA RL=100 | | 5 | nS |
Package Outline Dimensions (SOT-363)
| Symbol | Dimension in Millimeters | Min | Max |
| A | | 0.90 | 1.00 |
| A1 | | 0.010 | 0.100 |
| B | | 1.20 | 1.40 |
| bp | | 0.25 | 0.45 |
| C | | 0.09 | 0.15 |
| D | | 2.00 | 2.20 |
| E | | 1.15 | 1.35 |
| HE | | 2.15 | 2.55 |
| Lp | | 0.25 | 0.46 |
| | 0 | 6 |
2410121628_CBI-BAS40DW-04_C21714277.pdf