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Metal Silicon Junction Diode Changzhou Starsea Elec 1N5822 Schottky Rectifier for Inverters
Metal Silicon Junction Diode Changzhou Starsea Elec 1N5822 Schottky Rectifier for Inverters
Specifications
Non-Repetitive Peak Forward Surge Current :
80A
Operating Junction Temperature Range :
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max) :
40V
Voltage - Forward(Vf@If) :
525mV@3A
Current - Rectified :
3A
Description :
Diode 40V 3A Through Hole DO-201AD
Mfr. Part # :
1N5822
Model Number :
1N5822
Package :
DO-201AD
Description

Product Overview

The 1N5820 thru 1N5822 series are Schottky barrier rectifiers designed for low voltage, high frequency applications. Featuring a metal silicon junction with majority carrier conduction and a guardring for overvoltage protection, these rectifiers offer low power loss, high efficiency, and high current capability with a low forward voltage drop. They are suitable for use in inverters, free wheeling circuits, and polarity protection applications. The JEDEC DO-201AD molded plastic body with plated axial leads ensures solderability per MIL-STD-750, Method 2026, and the plastic package has an Underwriters Laboratory Flammability Classification 94V-0. High temperature soldering is guaranteed to 260C for 10 seconds.

Product Attributes

  • Case: JEDEC DO-201AD molded plastic body
  • Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any
  • Plastic package Flammability Classification: 94V-0
  • Material: Metal silicon junction

Technical Specifications

Symbol 1N5820 1N5821 1N5822 Units Description
VRRM 20 30 40 Volts Maximum repetitive peak reverse voltage
VRMS 14 20 28 Volts Maximum RMS voltage
VDC 20 30 40 Volts Maximum DC blocking voltage
I(AV) 3.0 Amps Maximum average forward rectified current at TL=95C, 0.375 (9.5mm) lead length
IFSM 80.0 Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
VF 0.500 Volts Maximum instantaneous forward voltage at 3.0A
IR 0.5 (TA=25C at rated DC blocking voltage)
40.0 (TA=100C)		 mA Maximum DC reverse current
CJ 300.0 pF Typical junction capacitance (Measured at 1MHz and applied reverse voltage of 4.0V D.C.)
TJ, TSTG -65 to +125 C Operating junction and storage temperature range
RJA 40.0 C/W Typical thermal resistance from junction to ambient at 0.375 (9.5mm) lead length, P.C.B. mounted
Weight 0.04 ounce, 1.10 grams

Ratings at 25C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for current capacitive load derate by 20%. High temperature soldering guaranteed: 260C/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension.


1810121019_Changzhou-Starsea-Elec-1N5822_C84619.pdf

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Metal Silicon Junction Diode Changzhou Starsea Elec 1N5822 Schottky Rectifier for Inverters

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Product Detail
Non-Repetitive Peak Forward Surge Current :
80A
Operating Junction Temperature Range :
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max) :
40V
Voltage - Forward(Vf@If) :
525mV@3A
Current - Rectified :
3A
Description :
Diode 40V 3A Through Hole DO-201AD
Contact Supplier
Metal Silicon Junction Diode Changzhou Starsea Elec 1N5822 Schottky Rectifier for Inverters

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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