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Silicon Epitaxial Planar Diode Fast Switching Type CBI 1N4448WS SOD 323 Package PIN Diode
Silicon Epitaxial Planar Diode Fast Switching Type CBI 1N4448WS SOD 323 Package PIN Diode
Specifications
Non-Repetitive Peak Forward Surge Current :
500mA
Reverse Leakage Current (Ir) :
100nA@80V
Reverse Recovery Time (trr) :
4ns
Diode Configuration :
Independent
Voltage - DC Reverse (Vr) (Max) :
80V
Operating Junction Temperature Range :
-
Pd - Power Dissipation :
200mW
Voltage - Forward(Vf@If) :
1.25V@150mA
Current - Rectified :
150mA
Description :
Diode Independent 80V 150mA Surface Mount SOD-323
Mfr. Part # :
1N4448WS
Model Number :
1N4448WS
Package :
SOD-323
Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode, designed for fast switching applications. It is a PIN diode with a simplified outline in a SOD-323 package.

Product Attributes

  • Type: Fast Switching Diode
  • Construction: Silicon Epitaxial Planar
  • Package: SOD-323
  • Pinning: Cathode (1), Anode (2)
  • Marking Code: " "
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C) Value Unit
Peak Reverse Voltage 100 V
Reverse Voltage 80 V
Average Rectified Forward Current 150 mA
Forward Continuous Current 300 mA
Non-Repetitive Peak Forward Surge Current (at t = 1 s) 0.5 A
Power Dissipation 200 mW
Junction Temperature 150 C
Storage Temperature Range -65 to +150 C
Characteristics (at Ta = 25 C) Symbol Min. Max. Unit
Forward Voltage at IF = 5 mA at IF = 5 mA VF 0.62 - V
at IF = 10 mA VF - 0.72 V
at IF = 100 mA VF - 0.855 V
at IF = 150 mA VF - 1 V
Reverse Leakage Current at VR = 80 V IR - 1.25 V
at VR = 20 V IR - 100 nA
at VR = 75 V, TJ = 150 C IR - 25 nA
at VR = 25 V, TJ = 150 C IR - 50 A
Reverse Breakdown Voltage at IR = 100 A V(BR)R 80 - V
Total Capacitance at VR = 0.5 V, f = 1 MHz Ctot - 4 pF
Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 trr - 4 ns

2410121502_CBI-1N4448WS_C2919743.pdf

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Silicon Epitaxial Planar Diode Fast Switching Type CBI 1N4448WS SOD 323 Package PIN Diode

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Product Detail
Non-Repetitive Peak Forward Surge Current :
500mA
Reverse Leakage Current (Ir) :
100nA@80V
Reverse Recovery Time (trr) :
4ns
Diode Configuration :
Independent
Voltage - DC Reverse (Vr) (Max) :
80V
Operating Junction Temperature Range :
-
Contact Supplier
Silicon Epitaxial Planar Diode Fast Switching Type CBI 1N4448WS SOD 323 Package PIN Diode

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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