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QPD1003
QPD1003
Specifications
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
19.9 dB
Transistor Type : :
HEMT
Output Power : :
540 W
Package / Case : :
RF-565
Maximum Operating Temperature : :
+ 85 C
Vds - Drain-Source Breakdown Voltage : :
50 V
Packaging : :
Tray
Id - Continuous Drain Current : :
15 A
Vgs - Gate-Source Breakdown Voltage : :
145 V
Pd - Power Dissipation : :
370 W
Manufacturer : :
Qorvo
Description :
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
Description
The QPD1003,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product tags

XC95288XL-PQ208

,

XQ4010E-4PG191M

,

XC95288XL PQ208
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QPD1003

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Product Detail
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
19.9 dB
Transistor Type : :
HEMT
Contact Supplier
QPD1003

Shenzhen Chive Electronics Co., Ltd.

Active Member
3 Years
guangdong, shenzhen
Since 2016
Business Type :
Distributor/Wholesaler, Trading Company, Seller
Main Products :
16-bit Microcontrollers - MCU, Varistors, ARM Microcontrollers - MCU
Total Annual :
15000000-20000000
Employee Number :
50~150
Certification Level :
Active Member
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