Specifications
Transistor Polarity : :
N-Channel
Technology : :
GaN
Product Category : :
RF JFET Transistors
Mounting Style : :
Screw
Gain : :
18.6 dB
Transistor Type : :
HEMT
Output Power : :
330 W
Package / Case : :
440162
Maximum Operating Temperature : :
+ 130 C
Vds - Drain-Source Breakdown Voltage : :
150 V
Packaging : :
Tube
Maximum Drain Gate Voltage : :
-
Id - Continuous Drain Current : :
18 A
Vgs - Gate-Source Breakdown Voltage : :
- 10 V to + 2 V
Pd - Power Dissipation : :
-
Manufacturer : :
Wolfspeed / Cree
Description :
RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
Description
The CGHV14250F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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CGHV14250F

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Transistor Polarity : :
N-Channel
Technology : :
GaN
Product Category : :
RF JFET Transistors
Mounting Style : :
Screw
Gain : :
18.6 dB
Transistor Type : :
HEMT
Contact Supplier
CGHV14250F

Shenzhen Chive Electronics Co., Ltd.

Active Member
3 Years
guangdong, shenzhen
Since 2016
Business Type :
Distributor/Wholesaler, Trading Company, Seller
Total Annual :
15000000-20000000
Employee Number :
50~150
Certification Level :
Active Member
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