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YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
Specifications
Brand Name :
HAMAMATSU
Model Number :
S1227-1010BQ
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Delivery Time :
3 days
Packaging Details :
piping
Receiving surface :
10 × 10 mm
Package :
Ceramic
Refrigeration :
Uncooled type
Reverse voltage (Max.) :
5V
Description

Product Description:

S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

Features:

Detailed parameter

Receiving surface 10 × 10 mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.36A /W

Dark current (Max.) 50 pA

Rise time (typical value) 7 μs

Junction capacitance (typical value) 3000 pF

Noise equivalent power (typical value) 8.0×10-15 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 20 pA

YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

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YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

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Product Detail
Brand Name :
HAMAMATSU
Model Number :
S1227-1010BQ
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Contact Supplier
video
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band
YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Main Products :
Oxygen Gas Sensor, Electrochemical Gas Sensor, Gas Sensor
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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