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YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
Specifications
Brand Name :
HAMAMATSU
Model Number :
S16838-02MS
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1500
Delivery Time :
5-8 days
Packaging Details :
Tube installation
Refrigeration :
Non-cooled type
Spectral response range :
320 to 1100 nm
Maximum sensitivity wavelength :
(Typical value) 960 nm
Photosensitive sensitivity (typical value) :
0.58 A/W
Dark current (maximum value) :
10 pA
Rise time (typical value) :
2.5 μs
Description

S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter

Specification Description
Low dark current, pre-molded packaging
These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface.


Characteristics
-S16838-01MS: Applicable to the visible light band
-S16838 /S16840-02MS: Applicable to the visible light to infrared band
-S16765-01MS: Applicable to the visible light to near-infrared band

Detailed parameters
The illuminated surface is 2.8 × 2.4 mm
Encapsulation plastic
Encapsulation category
Refrigerated non-cooled type
The spectral response range is 320 to 1100 nm
The maximum sensitivity wavelength (typical value) is 960 nm
Photosensitive sensitivity (typical value) : 0.58 A/W
Dark current (maximum value) 10 pA
Rise time (typical value) 2.5 μs
Junction capacitance (typical value) : 700 pF
Measurement conditions: Ta = 25°C, typical values, photosensitive sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified

Specifications:

spectral response range 320 to 1100 nm
Illuminated surface 2.8 × 2.4 mm
Photosensitive sensitivity 0.58 A/W
Dark current (maximum value) 10 pA

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon PhotodiodeYJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon PhotodiodeYJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

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YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

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Product Detail
Brand Name :
HAMAMATSU
Model Number :
S16838-02MS
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1500
Contact Supplier
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode
YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
4 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Main Products :
Oxygen Gas Sensor, Electrochemical Gas Sensor, Gas Sensor
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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